The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

In the advancement of the semiconductor device technology, ZnO could be a prospective
alternative than the other metal oxides for its versatility and huge applications in different …

In advanced computing technologies, metal oxide-based resistive switching random access
memory (RRAM) has been considered an excellent scientific research interest in the areas …

Neuromorphic computing has attracted great attention to mimic the brain functions of
perception, learning and memory, which are considered to overcome the von Neumann …

In this study, a NiO-based resistive memristor was manufactured using a solution
combustion method. In this device, both analog and digital bipolar resistive switching were …

The future generation of digital technology will heavily rely on power efficient non-volatile
resistive memory systems as a potential alternative to flash memory due to its limitations in …

Numerous works that have demonstrated the study and enhancement of switching
properties of ZnO-based RRAM devices are discussed. Several native point defects that …

In recent decades, ZnO-based nanostructures have attracted considerable attention
because of their various possible morphologies, large surface-to-volume ratios, non-toxicity …

Memristors emulating biological synapses to perform memory and learning functions are
crucial for realizing bio-inspired neuromorphic systems. However, to meet the increasing …

MoSe 2-doped ultralong Se microwires of length/diameter ratio in the order of∼ 240 are
synthesized by hydrothermal method. An electronic resistive switching memory (ERSM) …