Elucidating the effect of etching time key-parameter toward optically and electrically-active silicon nanowires

M Naffeti, PA Postigo, R Chtourou, MA Zaïbi - Nanomaterials, 2020 - mdpi.com
In this work, vertically aligned silicon nanowires (SiNWs) with relatively high crystallinity
have been fabricated through a facile, reliable, and cost-effective metal assisted chemical …

Enhanced photodetection performance of vanadium pentoxide nanostructures deposited on porous silicon substrate via pulsed laser deposition

AJ Hadi, UM Nayef, FAH Mutlak, MS Jabir - Optical and Quantum …, 2024 - Springer
The combination of common semiconductors with porous materials has the potential to
augment the splitting of electrons and holes, hence increasing the efficiency of …

Preparation and Characterization of Electrochemically Deposited Cu2O/ZnO Heterojunctions on Porous Silicon

A Çetinel, G Utlu - ACS omega, 2023 - ACS Publications
Cu2O/ZnO heterojunction was fabricated on porous silicon (PSi) by a two-step
electrochemical deposition technique with changing current densities and deposition times …

Characterization of octahedral Cu2O nanostructures grown on porous silicon by electrochemical deposition

A Çetinel - Materials Chemistry and Physics, 2022 - Elsevier
Cuprous oxide (Cu 2 O) nanostructures on porous silicon (PSi) were obtained by an
electrochemical deposition method. The effects of current density and deposition time on …

Effect of different etching times on the structural, morphological, electrical, and antimicrobial properties of mesoporous silicon

P Sivaprakash, R Venkatesan, SE Muthu, MR Hatshan… - Heliyon, 2023 - cell.com
The present work focuses on the structural, morphological, electrical characteristics, and
antibacterial activity of mesoporous silicon (PS) against S. aureus and E. coli. We depict the …

Tailoring electrical characteristics of Si-nanowires and etched Si by MACE temperature variation

MK Sahoo, SP Muduli, P Kale - Journal of Materials Science: Materials in …, 2023 - Springer
Optoelectronic applications prefer Si nanostructures over bulk-Si due to improved optical
and electrical properties. However, tuning the electrical properties of Si nanostructures is a …

Efficient diode performance with improved effective carrier lifetime and absorption using bismuth nanoparticles passivated silicon nanowires

M Naffeti, MA Zaïbi, AV García-Arias, R Chtourou… - Nanomaterials, 2022 - mdpi.com
In this paper, we report a novel design of bismuth nanoparticle-passivated silicon nanowire
(Bi@ SiNW) heterojunction composites for high diode performances and improved effective …

Improvement of a capacitive UV-sensor by porous silicon powders embedded in epoxy on porous silicon film

JC Lin, YH Lai, SH Lu, CH Wu, K Settu - Optical Materials Express, 2022 - opg.optica.org
A high-sensitivity porous silicon (PS) powder-based capacitive UV-sensor is developed on
the PS-film structure. To the best of our knowledge, this is the first report on PS powder …

Electrical properties of polyaniline (PANI)-porous silicon (PS) heterostructure

P Nath, D Sarkar - Polymer Bulletin, 2024 - Springer
The present work reports fabrication of polyaniline (PANI)-porous silicon (PS)
heterostructure obtained by PANI coating on PS using vacuum coating deposition …

Impact of electroplating salt (AgNO3) concentration on the morphological, optical, electrical and thermoelectric properties of silver assisted electrochemically etched …

P Nath, N Bano, D Sarkar - Current Applied Physics, 2023 - Elsevier
Silicon nanowires (SINWs) are fabricated through silver assisted electrochemical etching
route at room temperature. Very high yield vertically aligned SINWs are obtained through …