Si, SiGe nanowire devices by top–down technology and their applications
N Singh, KD Buddharaju, SK Manhas… - … on Electron Devices, 2008 - ieeexplore.ieee.org
Nanowire (NW) devices, particularly the gate-all-around (GAA) CMOS architecture, have
emerged as the front-runner for pushing CMOS scaling beyond the roadmap. These devices …
emerged as the front-runner for pushing CMOS scaling beyond the roadmap. These devices …
Force sensing and control in micromanipulation
In micromanipulation, the size of the manipulated object is usually much less than 1 mm in a
single dimension, in which case gravitational and inertial forces are no longer dominant …
single dimension, in which case gravitational and inertial forces are no longer dominant …
Vertical silicon-nanowire formation and gate-all-around MOSFET
B Yang, KD Buddharaju, SHG Teo… - IEEE Electron …, 2008 - ieeexplore.ieee.org
This letter presents a vertical gate-all-around silicon nanowire transistor on bulk silicon
wafer utilizing fully CMOS compatible technology. High aspect ratio (up to 50: 1) vertical …
wafer utilizing fully CMOS compatible technology. High aspect ratio (up to 50: 1) vertical …
Towards independent control of multiple magnetic mobile microrobots
In this paper, we have developed an approach for independent autonomous navigation of
multiple microrobots under the influence of magnetic fields and validated it experimentally …
multiple microrobots under the influence of magnetic fields and validated it experimentally …
Vertically stacked SiGe nanowire array channel CMOS transistors
WW Fang, N Singh, LK Bera… - IEEE electron device …, 2007 - ieeexplore.ieee.org
We demonstrate, for the first time, the fabrication of vertically stacked SiGe nanowire (NW)
arrays with a fully CMOS compatible technique. Our method uses the phenomenon of Ge …
arrays with a fully CMOS compatible technique. Our method uses the phenomenon of Ge …
CMOS inverter based on gate-all-around silicon-nanowire MOSFETs fabricated using top-down approach
SC Rustagi, N Singh, WW Fang… - IEEE Electron …, 2007 - ieeexplore.ieee.org
This letter demonstrates, for the first time, the integration of gate-all-around (GAA) Si-
nanowire transistors into CMOS inverters using top-down approach. With matching of the …
nanowire transistors into CMOS inverters using top-down approach. With matching of the …
Virtual reality and haptics for nanorobotics
A Ferreira, C Mavroidis - IEEE robotics & automation magazine, 2006 - ieeexplore.ieee.org
Virtual reality (VR) is a powerful technology for solving today's real-world problems. It
provides a way for people to visualize, manipulate, and interact with simulated environments …
provides a way for people to visualize, manipulate, and interact with simulated environments …
CAD-guided automated nanoassembly using atomic force microscopy-based nonrobotics
Nanoassembly using atomic force microscopy (AFM) is a promising technique for
nanomanufacturing. Most AFM-based nanoassembly schemes are implemented either …
nanomanufacturing. Most AFM-based nanoassembly schemes are implemented either …
Manipulating and assembling metallic beads with optoelectronic tweezers
Optoelectronic tweezers (OET) or light-patterned dielectrophoresis (DEP) has been
developed as a micromanipulation technology for controlling micro-and nano-particles with …
developed as a micromanipulation technology for controlling micro-and nano-particles with …
Sensor referenced real-time videolization of atomic force microscopy for nanomanipulations
The main problem of atomic force microscopy (AFM)-based nanomanipulation is the lack of
real-time visual feedback. Although this problem has been partially solved by virtual reality …
real-time visual feedback. Although this problem has been partially solved by virtual reality …