In this article and the related Part II, we investigate variability effects on the threshold voltage
of nanowire and Macaroni MOSFETs, focusing on random dopant fluctuations (RDFs) and …

In this paper, we comprehensively review the impacts of single-trap-induced random
telegraph noise (RTN) on FinFET, Ge/Si Nanowire FET and Tunnel FET (TFET). The …

This work reviews the low-frequency noise performance of different flavors of silicon Gate-All-
Around Nanowire (NW)(or Nanosheet-NS) transistors. For the horizontal devices, the 1/f-like …

Random telegraph noise (RTN) in trigate nanowire transistors (NW Tr.) is systematically
studied with respect to the NW size dependence. Time to capture and emission, which is …

In this article and in its Part I, we investigate variability effects on the threshold voltage of
nanowire (NW) and Macaroni devices, focusing on random dopant fluctuations and random …

As a promising alternative to the fundamental device structure, the gate-all-around silicon
nanowire transistor (GAA SNWT) has been studied extensively for decades. In this chapter …

We present a systematic investigation of random dopant fluctuations and random telegraph
noise instabilities in Nanowire and Macaroni MOSFETs via 3D atomistic Monte Carlo …

In this paper, a new method named Incremental Trap-Response (ITR) is proposed for
characterizing the time constants of switching oxide traps, which can be used to expand the …

The multi-gate device with Fin-or nanowire-shaped channel is considered as the
mainstream device structure towards the end of the CMOS technology roadmap. The …

Metal oxide semiconductor thin-film transistors (TFTs) have been recognized as the most
promising technology in the field of flexible electronics and flat-panel displays because of …