Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Molybdenum oxide (MoO x) films have been deposited by atomic layer deposition using bis
(tert-butylimido)-bis (dimethylamido) molybdenum and oxygen plasma, within a temperature …

Molybdenum oxide thin films are very appealing for gas sensing applications due to their
tunable material characteristics. Particularly, the growing demand for developing hydrogen …

Thin films of MoO3 have been obtained by the atomic layer deposition (ALD) technique
using molybdenum hexacarbonyl (Mo (CO) 6), ozone, and water as precursors. A window …

Provided herein are methods and apparatuses for filling features metal-containing materials.
One aspect of the dis closure relates to a method for filling structures with a metal-containing …

High-volume manufacturing of devices based on transition metal dichalcogenide (TMD)
ultrathin films will require deposition techniques that are capable of reproducible wafer-scale …

Future realization of a hydrogen-based economy requires a high-surface-area, low-cost, and
robust electrocatalyst for the hydrogen evolution reaction (HER). In this study, the MoN x thin …

Design and development of the growth-process for the production of wafer-scale spatially
homogeneous thickness controlled atomically thin transition metal dichalcogenides (TMDs) …

The bis (tert-butylimido)-molybdenum (VI) framework has been used successfully in the
design of vapor-phase precursors for molybdenum-containing thin films, so understanding …

The vapor deposition of many molybdenum-containing films relies on the delivery of volatile
compounds with the general bis (tert-butylimido) molybdenum (VI) framework, both in atomic …