On frequency and voltage dependent physical characteristics and interface states characterization of the metal semiconductor (MS) structures with (Ti: DLC) interlayer
In this present study, the electrical parameters of Al/p-Si (MS) structures with (Ti-doped DLC)
interfacial layer were investigated between 1 kHz and 4 MHz utilizing impedance …
interfacial layer were investigated between 1 kHz and 4 MHz utilizing impedance …
Complex dielectric, complex electric modulus, and electrical conductivity in Al/(Graphene-PVA)/p-Si (metal-polymer-semiconductor) structures
S Karadaş, SA Yerişkin, M Balbaşı… - Journal of Physics and …, 2021 - Elsevier
In this study, the real and imaginary components of the complex dielectric (ε*= ε′-jε'′),
complex electric modulus (M*= M′+ jM'′), and electrical conductivity (σ ac) were …
complex electric modulus (M*= M′+ jM'′), and electrical conductivity (σ ac) were …
A comparison of Au/n-Si Schottky diodes (SDs) with/without a nanographite (NG) interfacial layer by considering interlayer, surface states (Nss) and series resistance …
S Demirezen, Ş Altındal, Y Azizian-Kalandaragh… - Physica …, 2022 - iopscience.iop.org
In this paper, an organic interlayer, R s, and N ss on the transport-mechanisms (TMs), both
the Au/n-Si (MS) and Au/(Nanographite-PVP/n-Si (MPS)(SDs) were performed onto the …
the Au/n-Si (MS) and Au/(Nanographite-PVP/n-Si (MPS)(SDs) were performed onto the …
On the anomalous peak and negative capacitance in the capacitance–voltage (C–V) plots of Al/(% 7 Zn-PVA)/p-Si (MPS) structure
The frequency and voltage dependence of the capacitance–voltage (C–V) and conductance–
voltage (G/ω–V) characteristics of the Al/(% 7 Zn-doped PVA)/p-Si (MPS) structure were …
voltage (G/ω–V) characteristics of the Al/(% 7 Zn-doped PVA)/p-Si (MPS) structure were …
Effect of (Co–TeO2-doped polyvinylpyrrolidone) organic interlayer on the electrophysical characteristics of Al/p-Si (MS) structures
Abstract In this paper,(Co–TeO 2) nanostructures were synthesized using the microwave-
assisted method for the fabrication of (PVP: Co–TeO 2) as an organic interlayer (OI) at Al/p …
assisted method for the fabrication of (PVP: Co–TeO 2) as an organic interlayer (OI) at Al/p …
Effects of temperature, bias and frequency on the dielectric properties and electrical conductivity of Ni/SiO2/p-Si/Al MIS Schottky diodes
In this paper, we have studied the effects of temperature, bias and frequency on the
dielectric properties of Ni/SiO 2/p-Si/Al MIS diode. For that, we have carried out the …
dielectric properties of Ni/SiO 2/p-Si/Al MIS diode. For that, we have carried out the …
The origin of anomalous peak and negative capacitance on dielectric behavior in the accumulation region in Au/(0.07 Zn-doped polyvinyl alcohol)/n-4H–SiC metal …
MH Al-Dharob, A Kökce, DA Aldemir… - Journal of Physics and …, 2020 - Elsevier
Abstract Capacitance-voltage-temperature (C–VT) and conductance-voltage-temperature
(G/ω-VT) measurements of an Au/(0.07 Zn-doped polyvinyl alcohol)/n-4H–SiC metal …
(G/ω-VT) measurements of an Au/(0.07 Zn-doped polyvinyl alcohol)/n-4H–SiC metal …
Tunable dielectric characteristics of the nanocomposite diode based on functionalized graphene quantum dots with and without gadolinium
In this study, we have separately synthesized and characterized solutions of gadolinium
(Gd)-free and Gd-doped polyethyleneimine (PEI)-functionalized graphene quantum dots …
(Gd)-free and Gd-doped polyethyleneimine (PEI)-functionalized graphene quantum dots …
Analysis of dielectric, impedance and electrical properties of interfacial layer: AlN
DE Yıldız, A Tataroglu - Journal of Materials Science: Materials in …, 2023 - Springer
The purpose of this study is to investigate the electric and dielectric properties of Au/Ti/AlN/n-
Si device with using admittance measurements. Aluminum nitride (AlN) epitaxial template on …
Si device with using admittance measurements. Aluminum nitride (AlN) epitaxial template on …
Temperature and frequency effects on electrical and dielectric properties of n-4H SiC based metal–insulator-semiconductor (MIS) diode interlayered with Si3N4 thin …
HH Gullu, DE Yildiz - Journal of Materials Science: Materials in Electronics, 2020 - Springer
Abstract Effects of frequency and temperature variations on the electrical properties of Au/Si
3 N 4/n-4H SiC diode were investigated. The diode responses to the change in frequency …
3 N 4/n-4H SiC diode were investigated. The diode responses to the change in frequency …