A review on III–V compound semiconductor short wave infrared avalanche photodiodes

Y Liang, CP Veeramalai, G Lin, X Su, X Zhang… - …, 2022 - iopscience.iop.org
The on-chip avalanche photodiodes (APDs) are crucial component of a fully integrated
photonics system. Specifically, III–V compound APD has become one of the main …

Random alloy thick AlGaAsSb avalanche photodiodes on InP substrates

S Lee, B Guo, SH Kodati, H Jung, M Schwartz… - Applied Physics …, 2022 - pubs.aip.org
We demonstrate low noise random alloy (RA) Al 0.85 Ga 0.15 AsSb (hereafter AlGaAsSb)
avalanche photodiodes (APDs) nearly lattice-matched to InP substrates. In contrast to digital …

Broadband MSM photodetector based on S-doped black silicon fabricated by femtosecond laser

X Zhao, K Lin, B Zhao, W Du, JJJ Nivas… - Applied Surface …, 2023 - Elsevier
S-doped black silicon (Si) characterized by high absorption over a wide spectral band, from
visible to infrared, is directly processed in ambient air by femtosecond laser irradiation. The …

Airborne LiDAR data artifacts: What we know thus far

WY Yan - IEEE Geoscience and Remote Sensing Magazine, 2023 - ieeexplore.ieee.org
Data artifacts are a common occurrence in airborne lidar point clouds and their derivatives
[eg, intensity images and digital elevation models (DEMs)]. Defects, such as voids, holes …

Design of long‐wavelength infrared InAs/InAsSb type‐II superlattice avalanche photodetector with stepped grading layer

K Cheng, K Shen, C Li, D Guo, H Wang, J Wu - Electron, 2024 - Wiley Online Library
Weak response in long‐wavelength infrared (LWIR) detection has long been a perennial
concern, significantly limiting the reliability of applications. Avalanche photodetectors (APDs) …

High-Speed InAlAs Digital Alloy Avalanche Photodiode with Partially Depleted Absorber

W Wang, J Yao, H Lu, B Chen - 2024 Asia Communications …, 2024 - ieeexplore.ieee.org
High-Speed InAlAs Digital Alloy Avalanche Photodiode with Partially Depleted Absorber Page 1
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