The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …

GaN-based high-electron mobility transistors (HEMTs) have brought unprecedented
performance in terms of power, frequency, and efficiency. Application of metal-insulator …

We report on an Al 2 O 3/AlGaN/GaN metalinsulator-semiconductor high-electron-mobility
transistor (MIS-HEMT) with recessed-gate structure and regrown AlGaN barrier. After …

Ultrathin oxides (UOs) and ultrathin nitrides (UNs) play a crucial role in forming lattice-
mismatched semiconductor heterostructures that are fabricated by using semiconducting …

We report on the impact of the 3 nm thick ex situ AlGaN regrown layer prior to insulator
deposition on the interfacial properties of Al 2 O 3/AlGaN/GaN metal–insulator …

The recently demonstrated approach of grafting n-type GaN with p-type Si or GaAs, by
employing ultrathin Al 2 O 3 at the interface, has shown the feasibility to overcome the poor p …

Defects in the Al 2 O 3 (25 nm)/GaN structure were probed by using monoenergetic positron
beams. Al 2 O 3 films were deposited on GaN by atomic layer deposition at 300 C …

Recent demonstrations of grafted pn junctions combining n-type GaN with p-type
semiconductors have shown great potential in achieving lattice-mismatch epitaxy-like …

In this study, the effects of carbon impurity in the atomic layer deposited-Al 2 O 3 film on the
hard X-ray photoelectron spectroscopy (HAXPES) spectra and the electrical properties of …

In this work, we demonstrated a low current collapse normally on Al2O3/AlGaN/GaN MIS-
HEMT with in situ H-radical surface treatment on AlGaN. The in situ atomic pretreatment was …