Photoluminescence properties of cerium oxide nanoparticles as a function of lanthanum content

RC Deus, JA Cortés, MA Ramirez, MA Ponce… - Materials Research …, 2015 - Elsevier
The structural and photoluminescent properties at room temperature of CeO 2 and La-doped
CeO 2 particles were undertaken. The obtained particles were synthesized by a microwave …

Chalcogenide Perovskite Thin Films with Controlled Phases for Optoelectronics

Z Yu, H Hui, D West, H Zhang, Y Sun… - Advanced Functional …, 2024 - Wiley Online Library
Chalcogenide perovskites have emerged as promising semiconductor materials due to their
appealing properties, including tunable bandgaps, high absorption coefficients, reasonable …

Photoluminescence and High-Temperature Persistent Photoconductivity Experiments in SnO2 Nanobelts

ER Viana, JC González, GM Ribeiro… - The Journal of …, 2013 - ACS Publications
The persistent photoconductivity (PPC) effect was studied in individual tin oxide (SnO2)
nanobelts as a function of temperature, in air, helium, and vacuum atmospheres, and low …

Electrical behavior of cerium dioxide films exposed to different gases atmospheres

RC Deus, RAC Amoresi, PM Desimone, F Schipani… - Ceramics …, 2016 - Elsevier
Here we present an easy-reproducible microwave-assisted hydrothermal route for preparing
pure nanocrystalline CeO 2 films. The produced materials were characterized using a wide …

Light-induced nonthermal population of optical phonons in nanocrystals

BP Falcão, JP Leitão, MR Correia, MR Soares… - Physical Review B, 2017 - APS
Raman spectroscopy is widely used to study bulk and nanomaterials, where information is
frequently obtained from spectral line positions and intensities. In this study, we monitored …

Structural and optical characterization of Mg-doped GaAs nanowires grown on GaAs and Si substrates

BP Falcão, JP Leitão, MR Correia, MR Soares… - Journal of Applied …, 2013 - pubs.aip.org
We report an investigation on the morphological, structural, and optical properties of large
size wurtzite GaAs nanowires, low doped with Mg, grown on GaAs (111) B and Si (111) …

Fluctuating potentials in GaAs: Si nanowires: critical reduction of the influence of polytypism on the electronic structure

NB Sedrine, R Ribeiro-Andrade, A Gustafsson… - Nanoscale, 2018 - pubs.rsc.org
In this work, the effects of Si doping in GaAs nanowires (NWs) grown on GaAs (111) B by
molecular beam epitaxy with different Si doping levels (nominal free carrier concentrations …

New insights into the temperature-dependent photoluminescence of Mg-doped GaAs nanowires and epilayers

BP Falcao, JP Leitao, MR Correia, MF Leitao… - Journal of materials …, 2014 - pubs.rsc.org
The intentional introduction of impurities in semiconductor nanowires is very important in
view of device applications. Doping affects the electronic energy level structure which in the …

Electrical properties of polytypic Mg doped GaAs nanowires

N Cifuentes, ER Viana, H Limborço… - Journal of …, 2016 - Wiley Online Library
The electrical transport properties of individual Mg doped GaAs nanowires are investigated.
It is shown that Mg can be successfully used as a nontoxic p‐type dopant in GaAs …

Electronic transport in p‐type Mg‐doped GaAs nanowires

N Cifuentes, H Limborço, ER Viana… - … status solidi (b), 2016 - Wiley Online Library
The electronic transport properties of several Mg‐doped GaAs nanowires are investigated. It
is shown that Mg can be successfully used as a nontoxic and noncarcinogenic p‐type …