Material platforms for spin-based photonic quantum technologies
A central goal in quantum optics and quantum information science is the development of
quantum networks to generate entanglement between distributed quantum memories …
quantum networks to generate entanglement between distributed quantum memories …
Material platforms for defect qubits and single-photon emitters
Quantum technology has grown out of quantum information theory and now provides a
valuable tool that researchers from numerous fields can add to their toolbox of research …
valuable tool that researchers from numerous fields can add to their toolbox of research …
Silicon carbide color centers for quantum applications
S Castelletto, A Boretti - Journal of Physics: Photonics, 2020 - iopscience.iop.org
Silicon carbide has recently surged as an alternative material for scalable and integrated
quantum photonics, as it is a host for naturally occurring color centers within its bandgap …
quantum photonics, as it is a host for naturally occurring color centers within its bandgap …
Silicon carbide photonics bridging quantum technology
In the last two decades, bulk, homoepitaxial, and heteroepitaxial growth of silicon carbide
(SiC) has witnessed many advances, giving rise to electronic devices widely used in high …
(SiC) has witnessed many advances, giving rise to electronic devices widely used in high …
Silicon carbide for integrated photonics
Photonic integrated circuits (PICs) based on lithographically patterned waveguides provide
a scalable approach for manipulating photonic bits, enabling seminal demonstrations of a …
a scalable approach for manipulating photonic bits, enabling seminal demonstrations of a …
Single-photon emitters in hexagonal boron nitride: a review of progress
A Sajid, MJ Ford, JR Reimers - Reports on Progress in Physics, 2020 - iopscience.iop.org
This report summarizes progress made in understanding properties such as zero-phonon-
line energies, emission and absorption polarizations, electron–phonon couplings, strain …
line energies, emission and absorption polarizations, electron–phonon couplings, strain …
Defect states in hexagonal boron nitride: Assignments of observed properties and prediction of properties relevant to quantum computation
A Sajid, JR Reimers, MJ Ford - Physical Review B, 2018 - APS
Key properties of nine possible defect sites in hexagonal boron nitride (h-BN), VN, VN− 1,
CN, VNO 2 B, VNNB, VNCB, VBCN, VBCNS i N, and VNCBS i B, are predicted using density …
CN, VNO 2 B, VNNB, VNCB, VBCN, VBCNS i N, and VNCBS i B, are predicted using density …
Quantum decoherence dynamics of divacancy spins in silicon carbide
Long coherence times are key to the performance of quantum bits (qubits). Here, we
experimentally and theoretically show that the Hahn-echo coherence time of electron spins …
experimentally and theoretically show that the Hahn-echo coherence time of electron spins …
First-principles calculations of point defects for quantum technologies
Point defects in semiconductors and insulators form an exciting system for realizing quantum
technologies, including quantum computing, communication, and metrology. Defects …
technologies, including quantum computing, communication, and metrology. Defects …
Impurities and defects in 4H silicon carbide
R Wang, Y Huang, D Yang, X Pi - Applied Physics Letters, 2023 - pubs.aip.org
The widespread use of 4H silicon carbide (4H-SiC) is just around the corner since high-
power electronics based on 4H-SiC are increasingly fabricated to enable the low-carbon …
power electronics based on 4H-SiC are increasingly fabricated to enable the low-carbon …