Hexagonal boron nitride (h‐BN), an insulating 2D layered material, has recently attracted
tremendous interest motivated by the extraordinary properties it shows across the fields of …

As demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light
sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence …

Epitaxially grown high crystalline quality InGaN/AlGaN multiple quantum structures on
patterned sapphire with silica array (PSSA) have been successfully demonstrated. In …

Abstract Deep‐ultraviolet (DUV) solar‐blind communication (SBC) shows distinct
advantages of non‐line‐of‐sight propagation and background noise negligibility over …

Intrinsically directional light emitters are potentially important for applications in photonics
including lasing and energy-efficient display technology. Here, we propose a new route to …

The lighting industry undergoes a revolutionizing transformation with the introduction of III-
nitride semiconductors, and" LEDs" became a household name. The solid-state light source …

To study the size effect of AlGaInP red micro-LEDs on the silicon substrate, we fabricated
five AlGaInP red micro-LEDs with different pixel sizes (160× 160, 80× 80, 40× 40, 20× 20 …

AlGaN-based light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) spectral
range (210–280 nm) have demonstrated potential applications in physical sterilization …

Here we report a comprehensive numerical study for the operating behavior and physical
mechanism of nitride micro-light-emitting-diode (micro-LED) at low current density. Analysis …

We demonstrated AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with
periodic air-voids-incorporated nanoscale patterns enabled by nanosphere lithography and …