Kinetic interfaces form the basis of a fascinating, interdisciplinary branch of statistical
mechanics. Diverse stochastic growth processes can be unified via an intriguing nonlinear …

This review describes recent progress in the understanding of the emergence of scale
invariance in far-from-equilibrium growth. The first section is devoted to 'solvable'needle …

Surface properties of the material can affect the efficiency and behavior of the material when
in service. Modifying and tuning these surface properties to meet the specific demand for …

The use of fractal concepts in understanding various growth phenomena, such as molecular
beam epitaxy (MBE) or fluid flow in porous media, is increasingly important these days. This …

Crystal growth far from thermodynamic equilibrium is nothing but homoepitaxy-thin film
growth on a crystalline substrate of the same material. Because of the absence of misfit …

When growing a crystal, a planar front is desired for most of the applications. This plane
shape is often destroyed by instabilities of various types. In the case of growth from a …

The growth of a Cu (100) crystal has been investigated with helium atom beam scattering in
real time and examined in the light of the dynamical scaling hypothesis. The associated …

Low‐temperature molecular‐beam epitaxy (MBE) in semiconductors is reviewed, with a
focus on limited thickness epitaxy (LTE), the regime where crystalline growth over an …

We address the problem of the departure of a crystal surface from a perfectly ordered crystal
plane. We discuss the energetics of the surface defects and their statistical mechanics which …

The description of growth at vicinal surfaces leads to an anisotropic generalization of the
Kardar-Parisi-Zhang equation [Phys. Rev. Lett. 56, 889 (1986)] which is investigated by a …