For emerging wearable chip-based electronics, power loss is a critical concern for micro-
nano electronic circuits due to high subthreshold swing (SS) value of 60 mV dec− 1 for the …

We have investigated the electrothermal behavior in Cu/ZrO2/Pt conductive bridge random
access memory (CBRAM) memory based on the dual-phase-lag thermal model. We have …

With rapid development of integrated circuits, urgent requirements for a transistor with lower
subthreshold swing (SS) and better contact properties are needed. To optimize the SS and …

We report on resistive switching of memristive electrochemical metallization devices using
3D kinetic Monte Carlo simulations describing the transport of ions through a solid state …

Complementary resistive switches based on two anti-serially connected Ag/GeS x/Pt devices
were studied. The main focus was placed on the pulse mode properties as typically required …

Resistance switching devices based on electrochemical processes have attractive
significant attention in the field of nanoelectronics due to the possibility of switching in …

The analog-to-digital converter (ADC) is not only a key component in analog in-memory
computing (IMC) accelerators but also a bottleneck for the efficiency and accuracy of these …

Cation-based (or electrochemical) resistive memory devices are gaining increasing interest
in neuromorphic applications due to their capability to emulate the dynamic behaviour of …

Resistively switching Conductive Bridge Random Access Memories (CBRAMs) rely on the
controlled formation and dissolution of metallic filaments within a solid insulator, and are …

Monte Carlo (MC) simulations, including multiple physical and chemical mechanisms, were
performed to investigate the microstructure evolution of a conducting metal filament in a …