III–V nanowire photovoltaics: Review of design for high efficiency
RR LaPierre, ACE Chia, SJ Gibson… - physica status solidi …, 2013 - Wiley Online Library
This article reviews recent developments in nanowire‐based photovoltaics (PV) with an
emphasis on III–V semiconductors including growth mechanisms, device fabrication and …
emphasis on III–V semiconductors including growth mechanisms, device fabrication and …
Assembly of one dimensional inorganic nanostructures into functional 2D and 3D architectures. Synthesis, arrangement and functionality
RK Joshi, JJ Schneider - Chemical Society Reviews, 2012 - pubs.rsc.org
This review will focus on the synthesis, arrangement, structural assembly, for current and
future applications, of 1D nanomaterials (tubes, wires, rods) in 2D and 3D ordered …
future applications, of 1D nanomaterials (tubes, wires, rods) in 2D and 3D ordered …
Selective area epitaxy of III–V nanostructure arrays and networks: Growth, applications, and future directions
Selective area epitaxy (SAE) can be used to grow highly uniform III–V nanostructure arrays
in a fully controllable way and is thus of great interest in both basic science and device …
in a fully controllable way and is thus of great interest in both basic science and device …
Phase selection in self-catalyzed GaAs nanowires
Crystal phase switching between the zincblende and wurtzite structures in III–V nanowires is
crucial from the fundamental viewpoint as well as for electronic and photonic applications of …
crucial from the fundamental viewpoint as well as for electronic and photonic applications of …
Selectivity map for molecular beam epitaxy of advanced III–V quantum nanowire networks
Selective-area growth is a promising technique for enabling of the fabrication of the scalable
III–V nanowire networks required to test proposals for Majorana-based quantum computing …
III–V nanowire networks required to test proposals for Majorana-based quantum computing …
Position-controlled uniform GaAs nanowires on silicon using nanoimprint lithography
AM Munshi, DL Dheeraj, VT Fauske, DC Kim, J Huh… - Nano …, 2014 - ACS Publications
We report on the epitaxial growth of large-area position-controlled self-catalyzed GaAs
nanowires (NWs) directly on Si by molecular beam epitaxy (MBE). Nanohole patterns are …
nanowires (NWs) directly on Si by molecular beam epitaxy (MBE). Nanohole patterns are …
High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning
We report and detail a method to achieve growth of vertical self-catalyzed GaAs nanowires
directly on Si (111) with a near-perfect vertical yield, using electron-beam-defined arrays of …
directly on Si (111) with a near-perfect vertical yield, using electron-beam-defined arrays of …
Self-equilibration of the diameter of Ga-catalyzed GaAs nanowires
Designing strategies to reach monodispersity in fabrication of semiconductor nanowire
ensembles is essential for numerous applications. When Ga-catalyzed GaAs nanowire …
ensembles is essential for numerous applications. When Ga-catalyzed GaAs nanowire …
Arsenic pathways in self-catalyzed growth of GaAs nanowires
MR Ramdani, JC Harmand, F Glas… - Crystal Growth & …, 2013 - ACS Publications
Self-catalyzed growth of GaAs nanowires by molecular beam epitaxy on (111) Si substrates
is investigated by introducing Al x Ga1–x As time markers. The nanowire elongation rate is …
is investigated by introducing Al x Ga1–x As time markers. The nanowire elongation rate is …
New mode of vapor− liquid− solid nanowire growth
We report on the new mode of the vapor− liquid− solid nanowire growth with a droplet
wetting the sidewalls and surrounding the nanowire rather than resting on its top. It is shown …
wetting the sidewalls and surrounding the nanowire rather than resting on its top. It is shown …