Are we there yet?-a metamorphic HEMT and HBT perspective
Metamorphic epitaxy technique offers the possibility of combining the advantages of low-
cost and manufacturability of GaAs substrates and the high performance of InP-based …
cost and manufacturability of GaAs substrates and the high performance of InP-based …
An improved nonlinear model for Millimeter-wave InP HBT including DC/AC dispersion effects
A Zhang, J Gao - IEEE Microwave and Wireless Components …, 2021 - ieeexplore.ieee.org
An improved millimeter-wave nonlinear model for InP heterojunction bipolar transistor (HBT)
is proposed in this letter. The frequency dispersion effect has been taken into account in the …
is proposed in this letter. The frequency dispersion effect has been taken into account in the …
An approach to determine small-signal model parameters for InP-based heterojunction bipolar transistors
J Gao, X Li, H Wang, G Boeck - IEEE transactions on …, 2006 - ieeexplore.ieee.org
A new method for the extraction of the small-signal model parameters of InP-based
heterojunction bipolar transistors (HBT) is proposed. The approach is based on the …
heterojunction bipolar transistors (HBT) is proposed. The approach is based on the …
High performance sub-100 nm Si thin-film transistors by Pattern-controlled crystallization of Thin channel layer and High temperature annealing
In this work, we report the fabrication of high performance thin-film transistors (TFTs) down to
sub-100 nm regime using Pattern-controlled crystallization of Thin channel layer and High …
sub-100 nm regime using Pattern-controlled crystallization of Thin channel layer and High …
[PDF][PDF] 110 GHz 铟磷异质结双极晶体管小信号模型参数提取方法
张傲， 张译心， 王博冉， 高建军 - 红外与毫米波学报, 2018 - journal.sitp.ac.cn
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异质结双极晶体管小信号模型 Page 1 第!" 卷第# 期 $%&' 年&$ Л 红外与毫米波学报 gPU:C08023 …
异质结双极晶体管小信号模型 Page 1 第!" 卷第# 期 $%&' 年&$ Л 红外与毫米波学报 gPU:C08023 …
Microwave noise modeling for InP-InGaAs HBTs
J Gao, X Li, H Wang, G Boeck - IEEE transactions on microwave …, 2004 - ieeexplore.ieee.org
Analytical expressions for the noise parameters of microwave InP double heterojunction
bipolar transistors (DHBTs) are presented in this paper. These expressions are derived from …
bipolar transistors (DHBTs) are presented in this paper. These expressions are derived from …
Growth of InP on GaAs (001) by hydrogen-assisted low-temperature solid-source molecular beam epitaxy
PA Postigo, F Suárez, A Sanz-Hervás… - Journal of Applied …, 2008 - pubs.aip.org
Direct heteroepitaxial growth of InP layers on GaAs (001) wafers has been performed by
solid-source molecular beam epitaxy assisted by monoatomic hydrogen (H∗). The …
solid-source molecular beam epitaxy assisted by monoatomic hydrogen (H∗). The …
Direct parameter extraction method for InP heterojunction bipolar transistors based on the combination of T-and π-models up to 110 GHz
A Zhang, J Gao, H Wang - Semiconductor Science and …, 2019 - iopscience.iop.org
A parameter-extraction approach for determination of the small-signal equivalent circuit
model for InP/InGaAs double heterojunction bipolar transistors is presented in this paper …
model for InP/InGaAs double heterojunction bipolar transistors is presented in this paper …
Ultralow leakage In/sub 0.53/Ga/sub 0.47/As pin photodetector grown on linearly graded metamorphic In/sub x/Ga/sub 1-x/P buffered GaAs substrate
GR Lin, HC Kuo, CK Lin, M Feng - IEEE journal of quantum …, 2005 - ieeexplore.ieee.org
A novel top-illuminated In/sub 0.53/Ga/sub 0.47/As pin photodiodes (MM-PINPD) grown on
GaAs substrate by using linearly graded metamorphic In/sub x/Ga/sub 1-x/P (x graded from …
GaAs substrate by using linearly graded metamorphic In/sub x/Ga/sub 1-x/P (x graded from …
Direct growth of high-quality InP layers on GaAs substrates at low temperature by metalorganic vapor phase epitaxy
CI Liao, KF Yarn, CL Lin, YL Lin… - Japanese journal of …, 2003 - iopscience.iop.org
Direct growth of metamorphic structure of high quality InP layers on GaAs substrates by
metalorganic vapor phase epitaxy is presented. The quality of the top InP layer is strongly …
metalorganic vapor phase epitaxy is presented. The quality of the top InP layer is strongly …