The group III nitrides (AlN, GaN and InN) represent an important trio of semiconductors
because of their direct band gaps which span the range 1.95-6.2 eV, including the whole of …

We present velocity-field simulations of n-doped, wurtzite-phase GaN for temperatures
between 77 and 1000 K using an ensemble Monte Carlo technique. A three-valley model of …

This work presents nonlocal pseudopotential calculations based on realistic, effective atomic
potentials of the wurtzite phase of GaN, InN, and AlN. A formulation formulation for the model …

This paper reports an investigation of the physical origin of the thermal droop (the drop of the
optical power at high temperatures) in InGaN-based light-emitting diodes. We critically …

We report on high magnetic fields up to 40 T cyclotron resonance, quantum Hall effect and
Shubnikov-de-Hass measurements in high frequency transistors based on Si-doped GaN …

We investigated the temperature-dependent reverse characteristics (JR-VR-T) of vertical
GaN Schottky-barrier diodes with and without a fluorine-implanted edge termination (ET). To …

We calculate the excitonic exchange interaction in α-GaN, and find it to be about 2 meV. A
theoretical modeling of excitons is performed, and the oscillator strengths of radiative levels …

The diagonal and nondiagonal components of the transverse magnetoresistance have been
measured, over a wide magnetic field range, in modulated doped Al 0.25 Ga 0.75 N/GaN …

We report the results of direct measurements and a theoretical investigation of the in-plane
effective mass in the two-dimensional electron gas of nominally undoped AlGaN/GaN …

We present data on mobility lifetime τ t, quantum lifetime τ q, and cyclotron resonance
lifetime τ CR, of a sequence of high-mobility two-dimensional electron gases in the …