The wide bandgap of silicon carbide (SiC) has attracted a large interest over the past years
in many research fields, such as power electronics, high operation temperature circuits …

In this letter, we present the first graphene FET operation for zero-bias resistive FET mixers,
utilizing modulation of graphene channel resistance rather than ambipolar mixer operations …

Two new analyses for a single-stage limiter were presented; one is an analytic approach
based on the approximation of the voltage waveforms of a pin diode in the limiter, while the …

A MMIC process in AlGaN/GaN technology for advanced transceiver design has been
developed. The process is based on microstrip technology with a complete model library of …

Accurately sensing the temperature in silicon carbide (power) devices is of great importance
to their reliable operation. Here, temperature sensors by resistive and CMOS structures are …

This article presents design, realization and test results of an Schottky diode limiter with
provision of adjustable threshold power level operating at 11.5 GHz. The article also …

The opposite signs of the temperature coefficient of resistance (TCR) of two thin film
materials, titanium nitride (TiN) and tantalum nitride (TaN), were used to form temperature …

Measured and simulated transient characteristics of a SiC metal-semiconductor field-effect
transistor are compared. Self-heating, gate tunneling, substrate, and surface traps are taken …

The design and performance of wideband FET limiter MMICs utilizing GaN on SiC
technology are presented. Two different single pole single throw (SPST) switch based circuit …

In this paper we report our research on DC and S parameter simulations and DC and RF
characteristics experimental results of 4H–SiC MESFETs on a high purity semi-insulating …