Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Recent trends in the microelectronics industry are requiring the growth of metallic first row
transition metal films by the atomic layer deposition (ALD) method. The ALD growth of noble …

In the past decade, atomic layer deposition (ALD) has become an important thin film
deposition technique for applications in nanoelectronics, catalysis, and other areas due to its …

5,527,752 A 6/1996 Reichle et al. 5,846,895 A 12/1998 Gila et al. 5,861,352 A 1/1999 Gila et
al. 6,001,742 A 12/1999 Chang 6,197.683 B1 3/2001 Kang et al. 6,268.448 B1 7/2001 …

A search of the recent literature reveals that there is a continuous growth of scientific
publications on the development of chemical vapor deposition (CVD) processes for silicon …

Atomic layer deposition (ALD) is one of the most promising methodologies available for the
growth of solid thin films conformally on complex topographies and with atomic-level control …

Cobalt metal films have important applications as magnetic materials, precursors to CoSi2
contact materials, and liners and caps of copper features in microelectronics devices. 1− 6 …

The atomic layer deposition (ALD) of Cu metal films was carried out by a two-step process
with Cu (OCHMeCH2NMe2) 2 and BH3 (NHMe2) on Ru substrates and by a three-step …

The thermal chemistry of copper (I)-N, N′-di-sec-butylacetamidinate on Ni (110) single-
crystal and cobalt polycrystalline surfaces was characterized under ultrahigh vacuum (UHV) …

Treatment of MCl2 (M= Cr, Mn, Fe, Co, Ni) with 2 equiv of lithium metal and 1, 4-di-tert-butyl-
1, 3-diazadiene (tBu2DAD) in tetrahydrofuran at ambient temperature afforded Cr …