Si–Ge–Sn alloys: From growth to applications

S Wirths, D Buca, S Mantl - Progress in crystal growth and characterization …, 2016 - Elsevier
In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …

[HTML][HTML] Review of Si-based GeSn CVD growth and optoelectronic applications

Y Miao, G Wang, Z Kong, B Xu, X Zhao, X Luo, H Lin… - Nanomaterials, 2021 - mdpi.com
GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …

Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K

J Margetis, S Al-Kabi, W Du, W Dou, Y Zhou… - ACs …, 2017 - ACS Publications
A Si-based monolithic laser is strongly desired for the full integration of Si-photonics. Lasing
from the direct bandgap group-IV GeSn alloy has opened a new avenue, different from the …

Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation

S Assali, J Nicolas, O Moutanabbir - Journal of Applied Physics, 2019 - pubs.aip.org
We investigate the effect of strain on the morphology and composition of GeSn layers grown
on Ge/Si virtual substrates. By using buffer layers with controlled thickness and Sn content …

[HTML][HTML] Group IV direct band gap photonics: methods, challenges, and opportunities

R Geiger, T Zabel, H Sigg - Frontiers in Materials, 2015 - frontiersin.org
The concept of direct band gap group IV materials may offer a paradigm change for Si-
photonics concerning the monolithic implementation of light emitters: the idea is to integrate …

Band engineering and growth of tensile strained Ge/(Si) GeSn heterostructures for tunnel field effect transistors

S Wirths, AT Tiedemann, Z Ikonic, P Harrison… - Applied physics …, 2013 - pubs.aip.org
In this letter, we propose a heterostructure design for tunnel field effect transistors with two
low direct bandgap group IV compounds, GeSn and highly tensely strained Ge in …

[HTML][HTML] Growth and strain modulation of GeSn alloys for photonic and electronic applications

Z Kong, G Wang, R Liang, J Su, M Xun, Y Miao, S Gu… - Nanomaterials, 2022 - mdpi.com
GeSn materials have attracted considerable attention for their tunable band structures and
high carrier mobilities, which serve well for future photonic and electronic applications. This …

Study of GeSn based heterostructures: towards optimized group IV MQW LEDs

D Stange, N Von Den Driesch, D Rainko… - Optics express, 2016 - opg.optica.org
We present results on CVD growth and electro-optical characterization of Ge_0. 92Sn_0.
08/Ge pin heterostructure diodes. The suitability of Ge as barriers for direct bandgap GeSn …

[HTML][HTML] Si–Ge–Sn alloys grown by chemical vapour deposition: a versatile material for photonics, electronics, and thermoelectrics

D Grützmacher, O Concepción, QT Zhao, D Buca - Applied Physics A, 2023 - Springer
Abstract Si–Ge–Sn alloys are offering unusual material properties with a strong potential to
add a variety of functionalities to advanced CMOS technology. Being a group IV alloy …

[HTML][HTML] Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff

BR Conley, J Margetis, W Du, H Tran, A Mosleh… - Applied Physics …, 2014 - pubs.aip.org
Thin-film Ge 0.9 Sn 0.1 structures were grown by reduced-pressure chemical vapor
deposition and were fabricated into photoconductors on Si substrates using a CMOS …