In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …

GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …

A Si-based monolithic laser is strongly desired for the full integration of Si-photonics. Lasing
from the direct bandgap group-IV GeSn alloy has opened a new avenue, different from the …

We investigate the effect of strain on the morphology and composition of GeSn layers grown
on Ge/Si virtual substrates. By using buffer layers with controlled thickness and Sn content …

The concept of direct band gap group IV materials may offer a paradigm change for Si-
photonics concerning the monolithic implementation of light emitters: the idea is to integrate …

In this letter, we propose a heterostructure design for tunnel field effect transistors with two
low direct bandgap group IV compounds, GeSn and highly tensely strained Ge in …

GeSn materials have attracted considerable attention for their tunable band structures and
high carrier mobilities, which serve well for future photonic and electronic applications. This …

We present results on CVD growth and electro-optical characterization of Ge_0. 92Sn_0.
08/Ge pin heterostructure diodes. The suitability of Ge as barriers for direct bandgap GeSn …

Abstract Si–Ge–Sn alloys are offering unusual material properties with a strong potential to
add a variety of functionalities to advanced CMOS technology. Being a group IV alloy …

Thin-film Ge 0.9 Sn 0.1 structures were grown by reduced-pressure chemical vapor
deposition and were fabricated into photoconductors on Si substrates using a CMOS …