The effect of ionization and displacement damage on minority carrier lifetime
Based on 1 MeV electrons and 40 MeV Si ion irradiations, the contribution of ionization and
displacement damage to the decrease in the minority carrier lifetime of gate controlled …
displacement damage to the decrease in the minority carrier lifetime of gate controlled …
Separation of ionization traps in NPN transistors irradiated by lower energy electrons
Effects of oxide-trapped charge and interface traps induced by ionizing radiation, on the
degradation of the electrical properties in NPN bipolar junction transistors (BJTs), are …
degradation of the electrical properties in NPN bipolar junction transistors (BJTs), are …
Dynamics of interfacial carriers and negative photoconductance in CH3NH3PbBr3-ZnO heterostructure
Understanding the interfacial charge transfer process and its dynamical mechanism is
crucial to design efficient photoelectric devices. Methylammonium lead halide perovskite …
crucial to design efficient photoelectric devices. Methylammonium lead halide perovskite …
Current mode response of phototransistors to gamma radiation
MS Andjelković, GS Ristić - Radiation Measurements, 2015 - Elsevier
This paper investigates the current mode response of four commercial NPN phototransistors
under gamma radiation exposure from Co-60 source, with the aim to evaluate their …
under gamma radiation exposure from Co-60 source, with the aim to evaluate their …
Multiscale insights into the radiation effect of semiconductor materials
We develop a multiscale framework capturing the primary interaction, displacement cascade
generation and evolution, and realistic observable damaged structure based on Monte …
generation and evolution, and realistic observable damaged structure based on Monte …
Hydrogen soaking, displacement damage effects, and charge yield in gated lateral bipolar junction transistors
The effects of 70-keV and 1-MeV electron irradiations on gate-controlled lateral PNP
(GLPNP) transistors are evaluated with and without molecular hydrogen (H 2) soaking. At a …
(GLPNP) transistors are evaluated with and without molecular hydrogen (H 2) soaking. At a …
Remaining useful life estimation using accelerated degradation test, a gamma process, and the arrhenius model for nuclear power plants
M Kang, S Lee, JH Kim, CS Yoo, J Jang… - Journal of Mechanical …, 2022 - Springer
Predictive maintenance can be performed in nuclear power plants to prevent the failure of
their components and equipment. Estimating the remaining useful life (RUL) of the …
their components and equipment. Estimating the remaining useful life (RUL) of the …
The equivalence of displacement damage in silicon bipolar junction transistors
The current gain degradation in silicon bipolar junction transistors (BJTs) is examined under
the irradiation with heavy ions. To characterize the radiation damage of the BJTs, the …
the irradiation with heavy ions. To characterize the radiation damage of the BJTs, the …
A technique for characterizing ionization and displacement defects in NPN transistors induced by 1-MeV electron irradiation
In this paper, characteristics of damage defects in 3DG110 NPN transistors induced by 1-
MeV electrons were investigated by deep-level transient spectroscopy (DLTS) with the …
MeV electrons were investigated by deep-level transient spectroscopy (DLTS) with the …
Comparison of 1 MeV electron, Co-60 gamma and 1 MeV proton irradiation effects on silicon NPN transistors
The total dose effects of 1 MeV electrons on the dc electrical characteristics of silicon NPN
transistors are investigated in the dose range from 100 krad to 100 Mrad. The different …
transistors are investigated in the dose range from 100 krad to 100 Mrad. The different …