[HTML][HTML] A review of Ga2O3 materials, processing, and devices
Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …
An Overview of the Ultrawide Bandgap Ga2O3 Semiconductor-Based Schottky Barrier Diode for Power Electronics Application
HW Xue, QM He, GZ Jian, SB Long, T Pang… - Nanoscale research …, 2018 - Springer
Abstract Gallium oxide (Ga 2 O 3) is a new semiconductor material which has the advantage
of ultrawide bandgap, high breakdown electric field, and large Baliga's figure of merit …
of ultrawide bandgap, high breakdown electric field, and large Baliga's figure of merit …
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power
electronics with capabilities beyond existing technologies due to its large bandgap …
electronics with capabilities beyond existing technologies due to its large bandgap …
1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs
A 400-nm thick composite field plate oxide, with a combination of atomic layer deposited and
plasma enhanced chemical vapor deposited SiO 2 layers, is used to enhance the …
plasma enhanced chemical vapor deposited SiO 2 layers, is used to enhance the …
Recent advances in free-standing single crystalline wide band-gap semiconductors and their applications: GaN, SiC, ZnO, β-Ga 2 O 3, and diamond
Free-standing single crystalline semiconductor membranes have gained intensive attention
over the last few years due to their versatile usage in many applications. This material …
over the last few years due to their versatile usage in many applications. This material …
Progress of Ultra-Wide Bandgap Ga2O3 Semiconductor Materials in Power MOSFETs
As a promising ultra-wide bandgap semiconductor, the β-phase of Ga 2 O 3 has attracted
more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 …
more and more interest in the field of power electronics due to its ultra-wide bandgap (4.8 …
Lateral β-Ga2O3 field effect transistors
Abstract Beta phase Gallium Oxide (BGO) is an emerging ultra-wide bandgap
semiconductor with disruptive potential for ultra-low power loss, high-efficiency power …
semiconductor with disruptive potential for ultra-low power loss, high-efficiency power …
[HTML][HTML] Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics
The Pt/β-Ga 2 O 3 Schottky barrier diode and its temperature-dependent current-voltage
characteristics were investigated for power device application. The edge-defined film-fed …
characteristics were investigated for power device application. The edge-defined film-fed …
Review of gallium oxide based field-effect transistors and Schottky barrier diodes
Abstract Gallium oxide (Ga 2 O 3), a typical ultra wide bandgap semiconductor, with a
bandgap of∼ 4.9 eV, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of …
bandgap of∼ 4.9 eV, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of …
Ga2O3 MOSFETs Using Spin-On-Glass Source/Drain Doping Technology
K Zeng, JS Wallace, C Heimburger… - IEEE Electron …, 2017 - ieeexplore.ieee.org
We report the first demonstration of source/drain (S/D) doping using tin (Sn) doped spin-on-
glass (SOG) on Ga 2 O 3 power MOSFET. The effectiveness of SOG doping is verified by a …
glass (SOG) on Ga 2 O 3 power MOSFET. The effectiveness of SOG doping is verified by a …