In a process for producing an oriented inorganic crystalline film, a non-monocrystalline film
containing inorganic crystalline particles is formed on a substrate by a liquid phase …

The present invention corresponds to the use of p and n-type oxide semiconductors based
on copper nickel (OCu, Ni, with 0< x< 3; 0< y< 3) or multicomponent Gallium-Tin-Zinc-Cop …

Provided is a semiconductor device using a p-type oxide semiconductor layer and a method
of manufacturing the same. The device includes the p-type oxide layer formed of at least one …

Oxide thin film, electronic devices including the oxide thin film and methods of manufacturing
the oxide thin film, the methods including (A) applying an oxide precursor solution …

(57) ABSTRACT A method for producing an amorphous oxide thin film includes: a pre-
treatment process of selectively changing a binding state of an organic component, at a …

Y. Chen et al.“Microfabrication of dilute magnetic semiconducting Til—xCoxO2 films using
photosensitive sol-gel method”; Thin Solid Films, vol. 519, p. 1985-1988; 2011. C. Yuanqing …

The present invention disclosed herein relates to a method for forming an oxide film and a
method for fabricating an oxide thin film transistor, and more particularly, to a method for …

US20090068800A1 - Method and/or system for forming a thin film - Google Patents
US20090068800A1 - Method and/or system for forming a thin film - Google Patents Method …

Disclosed are a method for producing an oxide film using a low temperature process, an
oxide film and an electronic device. The method for producing an oxide film according to an …

Oxide thin film, electronic devices including the oxide thin film and methods of manufacturing
the oxide thin film, the methods including (A) applying an oxide precursor solution …