Photoelectron spectra from metal overlayers on GaP (110) show that the photoionization
light source may induce a surface photovoltage, causing an energy shift of valence-and core …

The application of core and valence level photoelectron spectroscopy to the study of
semiconductor heterojunctions and metal-semiconductor interfaces (Schottky barriers) is …

It has recently been shown that the determination of surface band bending in clean and
adsorbate-covered semiconductor surfaces may be seriously affected by non-equilibrium …

The study of metals deposited on semiconductor surfaces is important to determine the
chemical and electronic properties of these interfaces. In the present study, the formation of …

We measure the Schottky-barrier formation and the surface photovoltage induced by
synchrotron radiation by complementing photoemission measurements with a Kelvin probe …

We have revisited the issue of (empty) intrinsic surface states at the GaP (110) surface and
related Fermi-level position, since previous results based on photoemission experiments …

Temperature dependence of the Schottky-barrier heights of n-type semiconductors in the
temperature range of 7 to 300 K (Journal Article) | ETDEWEB home etdeweb img Made available …

The interaction of aluminium with cleaved GaP (100) surfaces is important in the
investigation of Schottky barrier formation since ideal Schottky behaviour has been reported …

This short review is an attempt to present our current understanding of Schottky barrier
formation as achieved using synchrotron radiation photoemission spectroscopy. No attempt …

Контакт металл-полупроводник (КМП), обладающий как омическим, так и
выпрямляющим свойством, является основным многофункциональным физическим …