Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

F Roccaforte, P Fiorenza, G Greco, RL Nigro… - Microelectronic …, 2018 - Elsevier
Among the wide band gap (WBG) semiconductors, silicon carbide (4H-SiC) and gallium
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …

Recent advances in GaN‐based power HEMT devices

J He, WC Cheng, Q Wang, K Cheng… - Advanced electronic …, 2021 - Wiley Online Library
The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …

Ohmic contacts to Gallium Nitride materials

G Greco, F Iucolano, F Roccaforte - Applied Surface Science, 2016 - Elsevier
In this review article, a comprehensive study of the mechanisms of Ohmic contact formation
on GaN-based materials is presented. After a brief introduction on the physics of Ohmic …

Barrier inhomogeneity and electrical properties of Pt∕ GaN Schottky contacts

F Iucolano, F Roccaforte, F Giannazzo… - Journal of Applied …, 2007 - pubs.aip.org
The temperature dependence of the electrical properties of Pt∕ Ga N Schottky barrier was
studied. In particular, a Schottky barrier height of 0.96 eV and an ideality factor of 1.16 were …

Analysis of surface roughness in Ti/Al/Ni/Au ohmic contact to AlGaN/GaN high electron mobility transistors

R Gong, J Wang, S Liu, Z Dong, M Yu, CP Wen… - Applied Physics …, 2010 - pubs.aip.org
A mechanism of the formation of the bulges on the surface of Ti/Al/Ni/Au Ohmic contact in
AlGaN/GaN high electron mobility transistors is proposed. According to the analysis of TEM …

Physics and technology of gallium nitride materials for power electronics

F Roccaforte, P Fiorenza, R Lo Nigro… - La Rivista del Nuovo …, 2018 - Springer
Owing to its exceptional physical and electronic properties, gallium nitride (GaN) is a
promising material that can find application in the fields of high-power and high-frequency …

Temperature dependence of the specific resistance in Ti∕ Al∕ Ni∕ Au contacts on n-type GaN

F Iucolano, F Roccaforte, A Alberti… - Journal of applied …, 2006 - pubs.aip.org
The temperature dependence of the specific resistance ρ c in annealed Ti∕ Al∕ Ni∕ Au
contacts on n-type GaN was monitored, obtaining information on the current transport …

Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization

G Greco, F Giannazzo, A Frazzetto, V Raineri… - Nanoscale research …, 2011 - Springer
The effects of near-surface processing on the properties of AlGaN/GaN heterostructures
were studied, combining conventional electrical characterization on high-electron mobility …

Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures

F Iucolano, G Greco, F Roccaforte - Applied Physics Letters, 2013 - pubs.aip.org
This letter reports on the temperature behavior of the structural and electrical properties of
Ti/Al/Ni/Au contacts to AlGaN/GaN heterostructures. While Ohmic contacts formed at 750 C …

Critical issues for interfaces to p-type SiC and GaN in power devices

F Roccaforte, A Frazzetto, G Greco, F Giannazzo… - Applied Surface …, 2012 - Elsevier
Silicon carbide (SiC) and gallium nitride (GaN) are excellent wide band gap materials for
power electronics. In spite of the significant progresses achieved in the last years, there are …