Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Among the wide band gap (WBG) semiconductors, silicon carbide (4H-SiC) and gallium
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …
Recent advances in GaN‐based power HEMT devices
The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …
systems require the development of power devices that can outperform conventional Si …
Ohmic contacts to Gallium Nitride materials
In this review article, a comprehensive study of the mechanisms of Ohmic contact formation
on GaN-based materials is presented. After a brief introduction on the physics of Ohmic …
on GaN-based materials is presented. After a brief introduction on the physics of Ohmic …
Barrier inhomogeneity and electrical properties of Pt∕ GaN Schottky contacts
The temperature dependence of the electrical properties of Pt∕ Ga N Schottky barrier was
studied. In particular, a Schottky barrier height of 0.96 eV and an ideality factor of 1.16 were …
studied. In particular, a Schottky barrier height of 0.96 eV and an ideality factor of 1.16 were …
Analysis of surface roughness in Ti/Al/Ni/Au ohmic contact to AlGaN/GaN high electron mobility transistors
A mechanism of the formation of the bulges on the surface of Ti/Al/Ni/Au Ohmic contact in
AlGaN/GaN high electron mobility transistors is proposed. According to the analysis of TEM …
AlGaN/GaN high electron mobility transistors is proposed. According to the analysis of TEM …
Physics and technology of gallium nitride materials for power electronics
Owing to its exceptional physical and electronic properties, gallium nitride (GaN) is a
promising material that can find application in the fields of high-power and high-frequency …
promising material that can find application in the fields of high-power and high-frequency …
Temperature dependence of the specific resistance in Ti∕ Al∕ Ni∕ Au contacts on n-type GaN
The temperature dependence of the specific resistance ρ c in annealed Ti∕ Al∕ Ni∕ Au
contacts on n-type GaN was monitored, obtaining information on the current transport …
contacts on n-type GaN was monitored, obtaining information on the current transport …
Near-surface processing on AlGaN/GaN heterostructures: a nanoscale electrical and structural characterization
G Greco, F Giannazzo, A Frazzetto, V Raineri… - Nanoscale research …, 2011 - Springer
The effects of near-surface processing on the properties of AlGaN/GaN heterostructures
were studied, combining conventional electrical characterization on high-electron mobility …
were studied, combining conventional electrical characterization on high-electron mobility …
Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures
This letter reports on the temperature behavior of the structural and electrical properties of
Ti/Al/Ni/Au contacts to AlGaN/GaN heterostructures. While Ohmic contacts formed at 750 C …
Ti/Al/Ni/Au contacts to AlGaN/GaN heterostructures. While Ohmic contacts formed at 750 C …
Critical issues for interfaces to p-type SiC and GaN in power devices
Silicon carbide (SiC) and gallium nitride (GaN) are excellent wide band gap materials for
power electronics. In spite of the significant progresses achieved in the last years, there are …
power electronics. In spite of the significant progresses achieved in the last years, there are …