Present world is acquainted with the plethora of battery operated portable electronic goods
in leaps and bounds. For long life of battery, it is very imperative to minimise the leakage …

As the technology scales down to 90 nm and below, static random access memory (SRAM)
standby leak-age power is becoming one of the most critical concerns for low power …

Here, a split gate insulator-controlled Junction less FET also known as SG-DM-JLFET is
investigated and proposed to recognize biomolecules such as uricase, biotin, or …

This paper presents analysis of the STATIC NOISE MARGIN (SNM), power dissipation,
ACCESS TIME and dynamic noise margin of a novel low power proposed 8T Static Random …

This paper delves into the convergence of mathematical and computer science principles
within the realm of electronics engineering, particularly focusing on device-level transistor …

In this paper, concepts of mathematics and computer science were applied to electronics
engineering field, specifically very large scale integration (VLSI) design and semiconductor …

An 11T transistor cell at 45 nanometer is proposed to overcome the leakage components
during the operations, compared with conventional 6T SRAM cell. The leakage components …

Today VLSI circuit fabrication technology has reached in nanometer dimension. When
CMOS technology superseded BJT technology, very low leakage current was one of the …

Reduction of process cost is the key factor for profitability in any industry. Semiconductor
industry is also not an exception of this rule. In this paper, a novel transistor structure has …

Wireless communication systems have evolved over the ages. However, there are some
undesirable effects of a wireless communication channel on the signals transmitted through …