Temperature-dependent electrical characteristics of CBD/CBD grown n-ZnO nanowire/p-Si heterojunction diodes
A Das, A Kushwaha, RK Sivasayan… - Journal of Physics D …, 2016 - iopscience.iop.org
Heterojunction diodes are fabricated using a low-temperature chemical bath deposition of
oriented and crystalline ZnO nanowires on a< 1 1 1> p-silicon substrate. The electrical …
oriented and crystalline ZnO nanowires on a< 1 1 1> p-silicon substrate. The electrical …
Impact of seed layer annealing on the optoelectronic properties of double-step CBD grown n-ZnO nanowires/p-Si heterojunctions
In the current work, n-ZnO nanowires are grown by employing double-step chemical bath
deposition (CBD) technique on p-Si substrate for the fabrication of n-ZnO nanowires/p-Si …
deposition (CBD) technique on p-Si substrate for the fabrication of n-ZnO nanowires/p-Si …
ZnO nanorod FET biosensors with enhanced sensing performance: design issues for rational geometry selection
B Chakraborty, D Mondal… - IEEE Sensors …, 2020 - ieeexplore.ieee.org
ZnO nanorod field effect transistor (FET) biosensors enable ultrasensitive, rapid and label
free detection of biomolecules. However, the fabrication of these nanorods without any …
free detection of biomolecules. However, the fabrication of these nanorods without any …
Tuning of transport properties of the double-step chemical bath deposition grown zinc oxide (ZnO) nanowires by controlled annealing: an approach to generate p-type …
ZnO nanowires/p-Si heterojunction diodes are fabricated by employing low temperature
double-step chemical bath deposition technique. The grown samples are initially annealed …
double-step chemical bath deposition technique. The grown samples are initially annealed …
Self-powered rapid binary UV photoswitching with n-ZnO NW/p-Si photodiode
Vertically oriented, high quality n-type ZnO nanowire/p-Si heterojunction photodiode is
fabricated by inexpensive chemical bath deposition technique. Under 5.30 mW/sq. cm, 374 …
fabricated by inexpensive chemical bath deposition technique. Under 5.30 mW/sq. cm, 374 …
[PDF][PDF] Investigation of the characteristic of n-ZnO NWs/p-Si Heterojunction Diode synthesized using the single-step hydrothermal method
S Bhattacharya, P Jha, S Saha, A Sarkar, N Bhadani… - researchgate.net
Fabrication of Nano-electronics Devices is one of the most promising research areas for
sustainable development of modern science and technology. In this paper, the characteristic …
sustainable development of modern science and technology. In this paper, the characteristic …
Investigation of oxygen vacancy induced resistive switching memory behavior in low-temperature grown n-ZnO/p-Si heterojunction diode
The current reports the unipolar bistable resistive switching behavior observed in n-ZnO/p-Si
heterojunction diodes. The vertically aligned n-ZnO nanowires/p-Si heterojunction diodes …
heterojunction diodes. The vertically aligned n-ZnO nanowires/p-Si heterojunction diodes …
[PDF][PDF] Electrical Characterization of n-ZnO Nanowire/p-Si Hetero-junction Diode in Presence of Traps
The self assembled vertical n-ZnO nanowires/p-Si heterojunction diodes are fabricated by
chemical bath deposition technique. The growth of ZnO nanowires are confirmed by SEM …
chemical bath deposition technique. The growth of ZnO nanowires are confirmed by SEM …