Through the age of nanoelectronics, device dimensions are curbed, and the size of
transistors is rapidly reduced. Scaling down transistors results in high-speed switching …

In this paper, a low band gap material and hetero-dielectric based silicon germanium source
nano wire TFET (SiGe-S-NW-TFET) is created and compared with conventional silicon nano …

This manuscript illustrates the effects of temperature (T) and Interface trap charges (ITCs) on
proposed device (Hetero Gate Oxide-Dual Work function-Step Channel Tunnel Field Effect …

Researchers are inclining toward heterostructures suitable lattice matching, in Tunnel FETs
to eliminate the difficulties of decreased On-Current, subthreshold swings, and ambipolar …

Metal fragments (pipe, chain, valves), at advanced stages of corrosion, were collected
underground in the Wieliczka salt mine. Macroscopically distinct zones of corroded material …

Purpose Tunnel field effect transistors (TFETs) have significantly steeper sub-threshold
slope (24–30 mv/decade), as compared with the conventional metal–oxide–semiconductor …

With the transistor dimensions scaling down to a few atoms, quantum phenomena-like
quantum tunneling and entanglement-will dictate the operation and performance of the next …

This paper presents novel hetero-gate TFET architecture to improve the DC and RF
characteristics of the device. To analyze the improved functionality, here we compared the …