Applications of atomic layer deposition to nanofabrication and emerging nanodevices
H Kim, WJ Maeng - Thin solid films, 2009 - Elsevier
Recently, with scaling down of semiconductor devices, need for nanotechnology has
increased enormously. For nanoscale devices especially, each of the layers should be as …
increased enormously. For nanoscale devices especially, each of the layers should be as …
Advanced electronic and optoelectronic materials by Atomic Layer Deposition: An overview with special emphasis on recent progress in processing of high‐k …
L Niinistö, M Nieminen, J Päiväsaari… - … status solidi (a), 2004 - Wiley Online Library
The principle and practice of Atomic Layer Deposition (ALD) are described with special
emphasis on the advantages of the method for processing of thin films for advanced …
emphasis on the advantages of the method for processing of thin films for advanced …
Method for manufacturing a low defect interface between a dielectric and a III-V compound
C Merckling - US Patent 8,314,017, 2012 - Google Patents
The present invention is related to a method for manufacturing a low defect interface
between a dielectric material and an III-V compound. More specifically, the present invention …
between a dielectric material and an III-V compound. More specifically, the present invention …
III–V compound semiconductor transistors—from planar to nanowire structures
Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic
device roadmap to further improve future performance increases of integrated circuits is …
device roadmap to further improve future performance increases of integrated circuits is …
Method of depositing rare earth oxide thin films
J Niinistō, M Putkonen, M Ritala, P Räisänen… - US Patent …, 2005 - Google Patents
The present invention concerns a process for depositing rare earth oxide thin films,
especially yttrium, lanthanum and gadolinium oxide thin films by an ALD process, according …
especially yttrium, lanthanum and gadolinium oxide thin films by an ALD process, according …
Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3
ML Huang, YC Chang, CH Chang, YJ Lee… - Applied Physics …, 2005 - pubs.aip.org
Al 2 O 3 was deposited on In 0.15 Ga 0.85 As∕ GaAs using atomic-layer deposition (ALD).
Without any surface preparation or postthermal treatment, excellent electrical properties of Al …
Without any surface preparation or postthermal treatment, excellent electrical properties of Al …
GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
A GaAs metal–oxide–semiconductor field-effect transistor MOSFET with thin Al2O3 gate
dielectric in nanometer nm range grown by atomic layer deposition is demonstrated. The nm …
dielectric in nanometer nm range grown by atomic layer deposition is demonstrated. The nm …
'Old Chemistries' for new applications: Perspectives for development of precursors for MOCVD and ALD applications
A Devi - Coordination chemistry reviews, 2013 - Elsevier
The concept of the transformation of molecules to materials has been well established in the
field of chemical vapor deposition (CVD) and atomic layer deposition (ALD). However …
field of chemical vapor deposition (CVD) and atomic layer deposition (ALD). However …
High ε gate dielectrics and for silicon
We report on growth and characterization of both epitaxial and amorphous films Gd 2 O 3 of
(ε= 14) and Y 2 O 3 (ε= 18) as the gate dielectrics for Si prepared by ultrahigh vacuum vapor …
(ε= 14) and Y 2 O 3 (ε= 18) as the gate dielectrics for Si prepared by ultrahigh vacuum vapor …
GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
For the first time, a III-V compound semiconductor MOSFET with the gate dielectric grown by
atomic layer deposition (ALD) is demonstrated. The novel application of the ALD process on …
atomic layer deposition (ALD) is demonstrated. The novel application of the ALD process on …