Piezoelectric and triboelectric materials have been extensively reported with the capabilities
of generating polarized charges or voltages under various types of mechanical strains or …

Abstract Information processing with optoelectronic devices provides an alternative way to
efficiently process hybrid optical and electronic signals. Ferroelectric field‐effect transistors …

Sb 2 Te 3 based thermoelectric thin films play a crucial role in energy conversion, whose
thermoelectric performance highly depends on electrical properties. Herein, we proposed a …

Abstract Ferroelectric‐field‐effect‐transistor (FeFET) memory, characterized by its
nonvolatile, nondestructive readout operation and low power consumption, has attracted …

Spinel oxide Co3O4 has attracted more and more attention for energy-and environment-
related applications. In order to tune the electrical properties of Co3O4, p-type …

Single-phase (00 l)-oriented Bi2Te3 topological insulator thin films have been deposited on
(111)-oriented ferroelectric 0.71 Pb (Mg1/3Nb2/3) O3–0.29 PbTiO3 (PMN–PT) single-crystal …

NiO–Ni composite films were heteroepitaxially grown on (111)-oriented ferroelectric 0.31 Pb
(In 1/2 Nb 1/2) O 3-0.35 Pb (Mg 1/3 Nb 2/3) O 3-0.34 PbTiO 3 (PIN-PMN-PT) single-crystal …

Integration of different functional materials into a device in which the physical properties can
be tuned using an electric field in a reversible and nonvolatile manner is highly desired for …

Abstract By constructing Eu 0.7 Sr 0.3 MnO 3 thin films/0.7 Pb (Mg 1/3 Nb 2/3) O 3-0.3 PbTiO
3 (001) multiferroic heterostructures, the electrical transport properties of the Eu 0.7 Sr 0.3 …

The spin-orbit interaction (SOI) offers a nonferromagnetic scheme to realize spin polarization
through utilizing an electric field. Electrically tunable SOIs through electrostatic gates have …