ASM GaN: Industry standard model for GaN RF and power devices—Part 1: DC, CV, and RF model
S Khandelwal, YS Chauhan, TA Fjeldly… - … on Electron Devices, 2018 - ieeexplore.ieee.org
We present the latest developments in Advance SPICE Model for GaN (ASM GaN) HEMTs in
this paper. The ASM GaN model has been recently selected as an industry-standard …
this paper. The ASM GaN model has been recently selected as an industry-standard …
Large-signal modeling of GaN HEMTs using hybrid GA-ANN, PSO-SVR, and GPR-based approaches
This article presents an extensive study and demonstration of efficient electrothermal large-
signal GaN HEMT modeling approaches based on combined techniques of Genetic …
signal GaN HEMT modeling approaches based on combined techniques of Genetic …
Capacitance modeling in dual field-plate power GaN HEMT for accurate switching behavior
In this paper, a surface-potential-based compact model is proposed for the capacitance of
an AlGaN/GaN high-electron mobility transistor (HEMT) dual field-plate (FP) structure, ie …
an AlGaN/GaN high-electron mobility transistor (HEMT) dual field-plate (FP) structure, ie …
[图书][B] Advanced SPICE Model for GaN HEMTs (ASM-HEMT): A New Industry-Standard Compact Model for GaN-based Power and RF Circuit Design
S Khandelwal - 2022 - books.google.com
This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a
new industry standard model for GaN-based power and RF circuit design. The author …
new industry standard model for GaN-based power and RF circuit design. The author …
Modeling of source/drain access resistances and their temperature dependence in GaN HEMTs
In this paper, we present the modeling of source/drain access resistances in the surface
potential based model named “Advanced SPICE Model for High Electron Mobility …
potential based model named “Advanced SPICE Model for High Electron Mobility …
Extreme temperature modeling of ALGAN/GAN HEMTS
SA Albahrani, D Mahajan, S Kargarrazi… - … on Electron Devices, 2020 - ieeexplore.ieee.org
The industry standard advanced SPICE model (ASM)-GaN compact model has been
enhanced to model the GaN high electron mobility transistors (HEMTs) at extreme …
enhanced to model the GaN high electron mobility transistors (HEMTs) at extreme …
Analysis and modeling of cross-coupling and substrate capacitances in GaN HEMTs for power-electronic applications
In this paper, we present a capacitance model for field-plate AlGaN/GaN High Electron
Mobility Transistor (HEMTs) accounting for the contribution of substrate capacitances and …
Mobility Transistor (HEMTs) accounting for the contribution of substrate capacitances and …
ASM-HEMT: compact model for GaN HEMTs
In this paper, we aim to present the Advances Spice Model for High Electron Mobility
Transistors (ASM-HEMT). The model is currently being considered in the second phase of …
Transistors (ASM-HEMT). The model is currently being considered in the second phase of …
Modeling the Impact of Dynamic Fin-Width on the I– V, C– V and RF Characteristics of GaN Fin–HEMTs
AUH Pampori, SA Ahsan… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
In this article, we introduce an engineering approach to model the current and charge
characteristics of an AlGaN/GaN Fin–HEMT. The model handles the effective width of the …
characteristics of an AlGaN/GaN Fin–HEMT. The model handles the effective width of the …
GaN HEMT modeling for power and RF applications using ASM-HEMT
In this paper, we aim to present an overview of a surface-potential (SP) based model named
“Advanced Spice Model for High Electron Mobility Transistor”(ASM-HEMT) for AlGaN/GaN …
“Advanced Spice Model for High Electron Mobility Transistor”(ASM-HEMT) for AlGaN/GaN …