Physical mechanisms causing the efficiency droop in InGaN/GaN blue light-emitting diodes
and remedies proposed for droop mitigation are classified and reviewed. Droop …

GaN is a key material for lighting technology. Yet, the carrier transport and ultrafast dynamics
that are central in GaN light-emitting devices are not completely understood. We present first …

We investigated the efficiency droop and polarization-induced internal electric field of InGaN
blue light-emitting diodes (LEDs) grown on silicon (111) and c-plane sapphire substrates …

The efficiency of light emitting diodes (LEDs) remains a topic of great contemporary interest
due to their potential to reduce the amount of energy consumed in lighting. The current …

We numerically investigated the optical/electrical characteristics of blue light-emitting-diodes
(LEDs) and developed some optimization strategies. Our aim is to increase the optical …

Until recently, the electrical efficiency of green nitride light-emitting diodes (LEDs) was
considerably lower than that of blue LEDs. This is particularly surprising as one would …

In this work, we have investigated the origin of efficiency droop for AlGaN-based deep
ultraviolet light-emitting diodes (DUV LEDs). We find that the efficiency droop is likely to be …

Blue InGaN/GaN light-emitting diodes with different numbers of quantum wells (QWs) are
numerically investigated. With increase of QW number, the output power and forward …

The Purcell effect in GaN-based flip-chip (FC) light-emitting diode (LED) structures is
investigated numerically using finite-difference time-domain simulations. Depending on the …

Efficiency-droop mechanisms and related technological remedies are critically analyzed in
multi-quantum-well (QW) InGaN/GaN blue light-emitting diodes by means of numerical …