Metal oxide resistive memory switching mechanism based on conductive filament properties
G Bersuker, DC Gilmer, D Veksler, P Kirsch… - Journal of Applied …, 2011 - pubs.aip.org
By combining electrical, physical, and transport/atomistic modeling results, this study
identifies critical conductive filament (CF) features controlling TiN/HfO 2/TiN resistive …
identifies critical conductive filament (CF) features controlling TiN/HfO 2/TiN resistive …
Filamentary and interface switching of CMOS-compatible Ta2O5 memristor for non-volatile memory and synaptic devices
To successively implement synaptic memristor device in the neuromorphic computing
system, it is essential to perform a variety of synaptic characteristics with low power …
system, it is essential to perform a variety of synaptic characteristics with low power …
Direct Observation of Dual-Filament Switching Behaviors in Ta2 O5-Based Memristors.
CF Chang, JY Chen, CW Huang, CH Chiu… - Small (Weinheim an …, 2017 - europepmc.org
The Forming phenomenon is observed via in situ transmission electron microscopy in the
Ag/Ta2 O5/Pt system. The device is switched to a low-resistance state as the dual filament is …
Ag/Ta2 O5/Pt system. The device is switched to a low-resistance state as the dual filament is …
Introduction of interfacial load polymeric layer to organic flexible memristor for regulating conductive filament growth
In flexible neuromorphic electronics, solution‐processed organic memristors are important
elements to perform memory functions. Despite considerable development for improving …
elements to perform memory functions. Despite considerable development for improving …
Compatible resistive switching mechanisms in Ni/SiOx/ITO and application to neuromorphic systems
M Park, J Park, S Kim - Journal of Alloys and Compounds, 2022 - Elsevier
In this work, we studied the switching mechanisms of Ni/SiO x/ITO devices before and after
experiencing a reversible switching. And we also investigated its application for …
experiencing a reversible switching. And we also investigated its application for …
Evidence of surface cleaning during electric field assisted sintering
CS Bonifacio, TB Holland, K van Benthem - Scripta Materialia, 2013 - Elsevier
The cleaning of nanoparticles from surface oxides or contaminants is critical during the initial
stages of spark plasma sintering (SPS). However, so far only indirect evidence has …
stages of spark plasma sintering (SPS). However, so far only indirect evidence has …
Factors determining the resistive switching behavior of transparent InGaZnO‐Based memristors
The overarching goal herein is to identify the factors dominating the performance of a‐IGZO‐
based memristors. Despite the highest on/off ratio, greater than 104 with a preferred minimal …
based memristors. Despite the highest on/off ratio, greater than 104 with a preferred minimal …
Role and optimization of thermal rapid annealing in Ta/TaOx/Ru based resistive switching memory
J Zhao, Y Li, J Li, L Zhou - Vacuum, 2021 - Elsevier
The performance of resistive switching (RS) device based on sandwich structure is greatly
affected by the characteristics of the RS layer, electrode, and interface. In this work, the effect …
affected by the characteristics of the RS layer, electrode, and interface. In this work, the effect …
Performance and reliability trade-offs for high-κ RRAM
N Raghavan - Microelectronics Reliability, 2014 - Elsevier
Resistive random access memories (RRAM) have shown tremendous potential in replacing
Flash technology for future non-volatile data storage device applications in just about a …
Flash technology for future non-volatile data storage device applications in just about a …
Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices
A Rodriguez-Fernandez, S Aldana… - … on Electron Devices, 2017 - ieeexplore.ieee.org
The impact of the dielectric thickness, forming polarity, and current compliance on the self-
rectifying current-voltage (IV) characteristics of Ni/HfO 2/n+-Si resistive random access …
rectifying current-voltage (IV) characteristics of Ni/HfO 2/n+-Si resistive random access …