By combining electrical, physical, and transport/atomistic modeling results, this study
identifies critical conductive filament (CF) features controlling TiN/HfO 2/TiN resistive …

To successively implement synaptic memristor device in the neuromorphic computing
system, it is essential to perform a variety of synaptic characteristics with low power …

The Forming phenomenon is observed via in situ transmission electron microscopy in the
Ag/Ta2 O5/Pt system. The device is switched to a low-resistance state as the dual filament is …

In flexible neuromorphic electronics, solution‐processed organic memristors are important
elements to perform memory functions. Despite considerable development for improving …

In this work, we studied the switching mechanisms of Ni/SiO x/ITO devices before and after
experiencing a reversible switching. And we also investigated its application for …

The cleaning of nanoparticles from surface oxides or contaminants is critical during the initial
stages of spark plasma sintering (SPS). However, so far only indirect evidence has …

The overarching goal herein is to identify the factors dominating the performance of a‐IGZO‐
based memristors. Despite the highest on/off ratio, greater than 104 with a preferred minimal …

The performance of resistive switching (RS) device based on sandwich structure is greatly
affected by the characteristics of the RS layer, electrode, and interface. In this work, the effect …

Resistive random access memories (RRAM) have shown tremendous potential in replacing
Flash technology for future non-volatile data storage device applications in just about a …

The impact of the dielectric thickness, forming polarity, and current compliance on the self-
rectifying current-voltage (IV) characteristics of Ni/HfO 2/n+-Si resistive random access …