Electrothermal monte carlo simulation of submicrometer Si/SiGe MODFETs
T Sadi, RW Kelsall, NJ Pilgrim - IEEE transactions on electron …, 2007 - ieeexplore.ieee.org
In this paper, we present results from the simulation of submicrometer Si/SiGe modulation-
doped field-effect transistors (MODFETs) using an electrothermal Monte Carlo method. The …
doped field-effect transistors (MODFETs) using an electrothermal Monte Carlo method. The …
[图书][B] Simulation and optimisation of SiGe MOSFETs
Y Zhao - 2000 - search.proquest.com
This research project is concerned with the development of methodology for simulating
advanced SiGe MOSFETs using commercial simulators, the calibration of simulators against …
advanced SiGe MOSFETs using commercial simulators, the calibration of simulators against …