Thin film photoelectrodes for solar water splitting

Y He, T Hamann, D Wang - Chemical Society Reviews, 2019 - pubs.rsc.org
Photoelectrochemical (PEC) water splitting has been intensively studied in the past decades
as a promising method for large-scale solar energy storage. Among the various issues that …

Heterogeneously integrated optoelectronic devices enabled by micro‐transfer printing

J Yoon, SM Lee, D Kang, MA Meitl… - Advanced Optical …, 2015 - Wiley Online Library
Transfer printing is a materials assembly technique that uses elastomeric stamps for
heterogeneous integration of various classes of micro‐and nanostructured materials into two …

Printed assemblies of GaAs photoelectrodes with decoupled optical and reactive interfaces for unassisted solar water splitting

D Kang, JL Young, H Lim, WE Klein, H Chen, Y Xi… - Nature Energy, 2017 - nature.com
Despite their excellent photophysical properties and record-high solar-to-hydrogen
conversion efficiency, the high cost and limited stability of III–V compound semiconductors …

High performance ultrathin GaAs solar cells enabled with heterogeneously integrated dielectric periodic nanostructures

SM Lee, A Kwong, D Jung, J Faucher, R Biswas… - ACS …, 2015 - ACS Publications
Due to their favorable materials properties including direct bandgap and high electron
mobilities, epitaxially grown III–V compound semiconductors such as gallium arsenide …

[HTML][HTML] Doping concentration dependence of the photoluminescence spectra of n-type GaAs nanowires

S Arab, M Yao, C Zhou, P Daniel Dapkus… - Applied Physics …, 2016 - pubs.aip.org
In this letter, the photoluminescence spectra of n-type doped GaAs nanowires, grown by the
metal organic chemical vapor deposition method, are measured at 4 K and 77 K. Our …

[PDF][PDF] A Repeatable Epitaxial Lift-Off Process from a Single GaAs Substrate for Low-Cost and High-Efficiency III-V Solar Cells.

W Choi, CZ Kim, CS Kim, W Heo, T Joo… - Advanced Energy …, 2014 - researchgate.net
DOI: 10.1002/aenm. 201400589 expansion coefficients and lattice constants between GaAs
and Si. Therefore, GaAs epilayers grown directly on Si substrates show high dislocation …

Multilayer-grown ultrathin nanostructured GaAs solar cells as a cost-competitive materials platform for III–V photovoltaics

B Gai, Y Sun, H Lim, H Chen, J Faucher, ML Lee… - ACS …, 2017 - ACS Publications
Large-scale deployment of GaAs solar cells in terrestrial photovoltaics demands significant
cost reduction for preparing device-quality epitaxial materials. Although multilayer epitaxial …

Plasmonically enhanced spectral upconversion for improved performance of GaAs solar cells under nonconcentrated solar illumination

H Chen, SM Lee, A Montenegro, D Kang, B Gai… - Acs …, 2018 - ACS Publications
Spectral upconversion has the potential to compensate for sub-bandgap transparency of
single-junction solar cells. Here a composite module of GaAs solar cells is presented that …

Numerical investigation on performance of ultra-thin GaAs solar cells enabled with frontal surface pyramid array

YS Peng, MH Yao, ZM Liu, JL Tu, QJ Cao… - Journal of Physics D …, 2022 - iopscience.iop.org
In this paper, the optical and electrical characteristics of ultra-thin GaAs solar cell with front-
surface pyramid array are investigated systematically. The results show that the cell with …

Flexible space solar cell array with radiation shield fabricated by guided-printing of cover glasses

P Kwak, N Kim, J Kim, D Kim, K Song, J Lee - Solar Energy Materials and …, 2017 - Elsevier
As the main electrical power source of spacecraft, solar cells require high electrical
performance and light weight, to provide enough electrical power for missions in space and …