Nanometre-scale electronics with III–V compound semiconductors

JA Del Alamo - Nature, 2011 - nature.com
For 50 years the exponential rise in the power of electronics has been fuelled by an increase
in the density of silicon complementary metal–oxide–semiconductor (CMOS) transistors and …

Atomic layer deposition: an overview

SM George - Chemical reviews, 2010 - ACS Publications
Atomic Layer Deposition: An Overview | Chemical Reviews ACS ACS Publications C&EN CAS
Find my institution Log In Chemical Reviews ACS Publications. Most Trusted. Most Cited. Most …

Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

V Miikkulainen, M Leskelä, M Ritala… - Journal of Applied …, 2013 - pubs.aip.org
Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments

MS Wong, JA Kearns, C Lee, JM Smith, C Lynsky… - Optics express, 2020 - opg.optica.org
The electrical and optical improvements of AlGaInP micro-light-emitting diodes (µLEDs)
using atomic-layer deposition (ALD) sidewall passivation were demonstrated. Due to the …

Band offsets of high K gate oxides on III-V semiconductors

J Robertson, B Falabretti - Journal of applied physics, 2006 - pubs.aip.org
III-V semiconductors have high mobility and will be used in field effect transistors with the
appropriate gate dielectric. The dielectrics must have band offsets over 1 eV to inhibit …

III–V compound semiconductor transistors—from planar to nanowire structures

H Riel, LE Wernersson, M Hong, JA Del Alamo - Mrs Bulletin, 2014 - cambridge.org
Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic
device roadmap to further improve future performance increases of integrated circuits is …

Single InAs nanowire room-temperature near-infrared photodetectors

J Miao, W Hu, N Guo, Z Lu, X Zou, L Liao, S Shi… - ACS …, 2014 - ACS Publications
Here we report InAs nanowire (NW) near-infrared photodetectors having a detection
wavelength up to∼ 1.5 μm. The single InAs NW photodetectors displayed minimum …

GaAs interfacial self-cleaning by atomic layer deposition

CL Hinkle, AM Sonnet, EM Vogel, S McDonnell… - Applied Physics …, 2008 - pubs.aip.org
The reduction and removal of surface oxides from GaAs substrates by atomic layer
deposition (ALD) of Al 2 O 3 and Hf O 2 are studied using in situ monochromatic x-ray …

Modulating the Interface Quality and Electrical Properties of HfTiO/InGaAs Gate Stack by Atomic-Layer-Deposition-Derived Al2O3 Passivation Layer

G He, J Gao, H Chen, J Cui, Z Sun… - ACS applied materials & …, 2014 - ACS Publications
In current work, the effect of the growth cycles of atomic-layer-deposition (ALD) derived
ultrathin Al2O3 interfacial passivation layer on the interface chemistry and electrical …

[PDF][PDF] Graphene-supported metal single-atom catalysts: a concise review

S Ren, Q Yu, X Yu, P Rong, L Jiang, J Jiang - Sci. China Mater, 2020 - researchgate.net
Single-atom catalysts (SACs) have become an emerging frontier trend in the field of
heterogeneous catalysis due to their high activity, selectivity and stability. SACs could …