Nanometre-scale electronics with III–V compound semiconductors
JA Del Alamo - Nature, 2011 - nature.com
For 50 years the exponential rise in the power of electronics has been fuelled by an increase
in the density of silicon complementary metal–oxide–semiconductor (CMOS) transistors and …
in the density of silicon complementary metal–oxide–semiconductor (CMOS) transistors and …
Atomic layer deposition: an overview
SM George - Chemical reviews, 2010 - ACS Publications
Atomic Layer Deposition: An Overview | Chemical Reviews ACS ACS Publications C&EN CAS
Find my institution Log In Chemical Reviews ACS Publications. Most Trusted. Most Cited. Most …
Find my institution Log In Chemical Reviews ACS Publications. Most Trusted. Most Cited. Most …
Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
V Miikkulainen, M Leskelä, M Ritala… - Journal of Applied …, 2013 - pubs.aip.org
Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …
suitable for depositing uniform and conformal films on complex three-dimensional …
Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments
The electrical and optical improvements of AlGaInP micro-light-emitting diodes (µLEDs)
using atomic-layer deposition (ALD) sidewall passivation were demonstrated. Due to the …
using atomic-layer deposition (ALD) sidewall passivation were demonstrated. Due to the …
Band offsets of high K gate oxides on III-V semiconductors
J Robertson, B Falabretti - Journal of applied physics, 2006 - pubs.aip.org
III-V semiconductors have high mobility and will be used in field effect transistors with the
appropriate gate dielectric. The dielectrics must have band offsets over 1 eV to inhibit …
appropriate gate dielectric. The dielectrics must have band offsets over 1 eV to inhibit …
III–V compound semiconductor transistors—from planar to nanowire structures
Conventional silicon transistor scaling is fast approaching its limits. An extension of the logic
device roadmap to further improve future performance increases of integrated circuits is …
device roadmap to further improve future performance increases of integrated circuits is …
Single InAs nanowire room-temperature near-infrared photodetectors
Here we report InAs nanowire (NW) near-infrared photodetectors having a detection
wavelength up to∼ 1.5 μm. The single InAs NW photodetectors displayed minimum …
wavelength up to∼ 1.5 μm. The single InAs NW photodetectors displayed minimum …
GaAs interfacial self-cleaning by atomic layer deposition
The reduction and removal of surface oxides from GaAs substrates by atomic layer
deposition (ALD) of Al 2 O 3 and Hf O 2 are studied using in situ monochromatic x-ray …
deposition (ALD) of Al 2 O 3 and Hf O 2 are studied using in situ monochromatic x-ray …
Modulating the Interface Quality and Electrical Properties of HfTiO/InGaAs Gate Stack by Atomic-Layer-Deposition-Derived Al2O3 Passivation Layer
In current work, the effect of the growth cycles of atomic-layer-deposition (ALD) derived
ultrathin Al2O3 interfacial passivation layer on the interface chemistry and electrical …
ultrathin Al2O3 interfacial passivation layer on the interface chemistry and electrical …
[PDF][PDF] Graphene-supported metal single-atom catalysts: a concise review
S Ren, Q Yu, X Yu, P Rong, L Jiang, J Jiang - Sci. China Mater, 2020 - researchgate.net
Single-atom catalysts (SACs) have become an emerging frontier trend in the field of
heterogeneous catalysis due to their high activity, selectivity and stability. SACs could …
heterogeneous catalysis due to their high activity, selectivity and stability. SACs could …