Recent developments in materials, architectures and processing of AlGaN/GaN HEMTs for future RF and power electronic applications: A critical review
This article critically reviews the architectural novelties, emerging materials (substrate,
buffer, barrier & contact materials), technological advancements, processing techniques …
buffer, barrier & contact materials), technological advancements, processing techniques …
Investigation of InAlN layers surface reactivity after thermal annealings: a complete XPS study for HEMT
Y Bourlier, M Bouttemy, O Patard… - ECS Journal of Solid …, 2018 - iopscience.iop.org
The surface chemistry of InAlN ultra-thin layers, having undergone an oxidation procedure
usually running through the HEMT fabrication process (850 C, O 2 and O 2+ Ar) is studied by …
usually running through the HEMT fabrication process (850 C, O 2 and O 2+ Ar) is studied by …
Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: a simulation study
This work describes the self-heating effects on the behavior of AlGaN/GaN-based high-
electron Mobility Transistors (HEMTs), which are grownon Sapphire substrate, using electro …
electron Mobility Transistors (HEMTs), which are grownon Sapphire substrate, using electro …
A unified electrothermal behavior modeling method for both SiC MOSFET and GaN HEMT
X Long, Z Jun, B Zhang, D Chen… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
This article has presented a unified electrothermal behavior modeling method for both
silicon carbide (SiC) metal oxide semiconductor field effect transistor (mosfet) and gallium …
silicon carbide (SiC) metal oxide semiconductor field effect transistor (mosfet) and gallium …
Gate-voltage independence of electron mobility in power AlGaN/GaN HEMTs
A Aminbeidokhti, S Dimitrijev… - … on Electron Devices, 2016 - ieeexplore.ieee.org
The mobility of current carriers in the channel of FETs usually depends on the applied gate
voltage. This paper presents experimental evidence that the electron mobility in the 2-D …
voltage. This paper presents experimental evidence that the electron mobility in the 2-D …
In‐depth analysis of InAlN/GaN HEMT heterostructure after annealing using angle‐resolved X‐ray photoelectron spectroscopy
Y Bourlier, M Bouttemy, M Fregnaux… - Surface and …, 2020 - Wiley Online Library
During high‐electron‐mobility transistor elaboration process, a thermal treatment of In0.
2Al0. 8N (InAlN) barrier layer is performed in order to improve electrical performances. We …
2Al0. 8N (InAlN) barrier layer is performed in order to improve electrical performances. We …
Temperature-dependent DC characteristics of AlInN/GaN high-electron-mobility transistors
A 1.5 μm gate AlInN: Mg/GaN HEMT, exhibiting a maximum drain current (I DS, max) of 700
mA/mm at a gate bias voltage (V GS) of 0 V and a maximum transconductance (gm, max) of …
mA/mm at a gate bias voltage (V GS) of 0 V and a maximum transconductance (gm, max) of …