Current understanding of bias-temperature instabilities in GaN MIS transistors for power switching applications
M Ťapajna - Crystals, 2020 - mdpi.com
GaN-based high-electron mobility transistors (HEMTs) have brought unprecedented
performance in terms of power, frequency, and efficiency. Application of metal-insulator …
performance in terms of power, frequency, and efficiency. Application of metal-insulator …
Dynamic on-resistance in GaN power devices: Mechanisms, characterizations, and modeling
S Yang, S Han, K Sheng… - IEEE Journal of Emerging …, 2019 - ieeexplore.ieee.org
Gallium nitride (GaN) power devices enable power electronic systems with enhanced power
density and efficiency. Dynamic on-resistance (R ON) degradation (or current collapse) …
density and efficiency. Dynamic on-resistance (R ON) degradation (or current collapse) …
Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs
In this paper, we present a systematic investigation of metal–organic chemical vapor
deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN …
deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN …
Improved operation stability of Al2O3/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates
Y Ando, S Kaneki, T Hashizume - Applied Physics Express, 2019 - iopscience.iop.org
This paper presents electrical characterization of Al 2 O 3/AlGaN/GaN metal–oxide–
semiconductor (MOS) high-electron-mobility transistors (HEMTs) grown on GaN substrates …
semiconductor (MOS) high-electron-mobility transistors (HEMTs) grown on GaN substrates …
Monolithic GaN half-bridge stages with integrated gate drivers for high temperature DC-DC buck converters
This paper presents a GaN based synchronous buck DC-DC converter, which monolithically
integrates gate drivers and a half-bridge power stage in a 3-μm enhancement-mode (E …
integrates gate drivers and a half-bridge power stage in a 3-μm enhancement-mode (E …
Over 1200 V normally-OFF p-NiO gated AlGaN/GaN HEMTs on Si with a small threshold voltage shift
H Guo, H Gong, P Shao, X Yu, J Wang… - IEEE Electron …, 2021 - ieeexplore.ieee.org
In this letter, we demonstrated a normally-off AlGaN/GaN HEMT using p-NiO as a gate stack
combined with a recess structure. The fabricated HEMT exhibits a positive threshold voltage …
combined with a recess structure. The fabricated HEMT exhibits a positive threshold voltage …
Worst-case bias for high voltage, elevated-temperature stress of AlGaN/GaN HEMTs
The effects of high-field stress are evaluated for industrial-quality AlGaN/GaN HEMTs as a
function of bias and temperature. Positive and negative threshold voltage shifts are …
function of bias and temperature. Positive and negative threshold voltage shifts are …
E-mode AlGaN/GaN HEMTs using p-NiO gates
Sputtered p-NiO films were used to suppress gate leakage and produce a positive shift in
the gate voltage of AlGaN/GaN high-electron mobility transistors for e-mode operation. A …
the gate voltage of AlGaN/GaN high-electron mobility transistors for e-mode operation. A …
Fabrication of High-Uniformity and High-Reliability Si3N4/AlGaN/GaN MIS-HEMTs With Self-Terminating Dielectric Etching Process in a 150-mm Si Foundry
H Sun, M Wang, J Chen, P Liu, W Kuang… - … on Electron Devices, 2018 - ieeexplore.ieee.org
A novel early gate dielectric AlGaN/GaN metal-insulator-semiconductor high-electron-
mobility transistors (MIS-HEMTs) process is reported. With the highquality Si 3 N 4 dielectric …
mobility transistors (MIS-HEMTs) process is reported. With the highquality Si 3 N 4 dielectric …
Effective suppression of interface states in recessed-gate MIS-HEMTs by TMAH wet etching
The effect of tetramethylammonium hydroxide (TMAH) treatment prior to gate dielectric
deposition on the performance of recessed-gate AlGaN/GaN metal-insulator-semiconductor …
deposition on the performance of recessed-gate AlGaN/GaN metal-insulator-semiconductor …