In this study, lithium fluoride (LiF) was employed as an interface material by thermal
evaporation technique and its effect of on basic device parameters such as Schottky barrier …

We present a novel resistance-compensated I–V method to extract the series resistance,
ideality factor, barrier height and built-in potential of a metal–semiconductor diode. We show …

Perovskites have attracted great interest because they provide promising improvement for
solar cells. Yet, the perovskites have not been extensively used by the researchers for diode …

An organic–silicon (O/S) interface represents a fundamental heterojunction in
semiconductor technology with significant implications for the advancement of electronic …

The present study includes the results of a series of studies on the appropriateness of their
use as photodiodes after investigating some of the physical properties of Zn doped NiO films …

Abstract Au/graphene/n-InP Schottky barrier diode (SBD) was fabricated by the use of spray
pyrolysis technique with a monolayer graphene interlayer, and the temperature dependent …

Abstract Undoped and 0.1% 0.5% and 1.0% indium doped ZnO thin films were obtained by
spin coating method as interfacial thin film layer between Al metal and p-Si semiconductor to …

Introduction: The current-voltage (IV) characteristics of the Al/p-type Si Metal-Semiconductor
(MS) and Al/GO/p-type Si Metal-Oxide-Semiconductor (MOS) structure were investigated at …

Задачей исследований является разработка структуры и способа изготовления
фотоэлемента, способного принимать излучение либо в ближней инфракрасной …

A superjunction metal-oxide-semiconductor field-effect transistor (SJ-MOSFET) with a trench
contact on partly relatively lightly doped p-pillar is proposed and investigated by TCAD …