Improvement of Dynamic Characteristic of the Etched JTE for 10kV 4H-SiC FID
M Wang, H Pu, Z Zhang, H Zhang… - 2024 3rd International …, 2024 - ieeexplore.ieee.org
The maximum voltage for silicon carbide (SiC) Fast Ionization Dynistor (FID) is significantly
exceeds than the static blocking voltage, rendering it challenging for conventional …
exceeds than the static blocking voltage, rendering it challenging for conventional …