Light-emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing
various applications in lighting, displays, biotechnology, and other fields. However, their …

The effect of the asymmetry in carrier concentration and mobility is studied in GaInN pn-
junction light-emitting diodes (LEDs). We propose and present experimental evidence that …

The recombination rate coefficients (RRCs) A, B, and C in MOVPE‐grown single‐quantum‐
well light emitting diodes spanning the entire blue‐green spectral range are determined by …

In InGaN quantum wells (QWs), effective active volume can be greatly reduced due to carrier
localization in In-rich region and inhomogeneous carrier distribution. The authors investigate …

InGaN-based blue and green light-emitting diodes are studied by temperature-dependent
electroluminescence (EL) from 300 to 50 K to elucidate the effects of carrier overflow and the …

We investigate the current-dependent and temperature-dependent efficiency droops (" J-
droop" and" T-droop", respectively) in InGaN-based blue and AlGaInP-based red light …

In this work, we simply take advantage of the polarization effect to efficiently improve the
hole injection from the p-type electron blocking layer (p-EBL) to the end of the active region …

At room temperature, AlGaInP pn-junction light-emitting diodes (LEDs) emitting at 630 nm do
not exhibit an efficiency droop. However, upon cooling the AlGaInP LEDs to cryogenic …

Efficiency droop is currently one of the most popular research problems for GaN-based light-
emitting diodes (LEDs). In this work, a differential carrier lifetime measurement system is …

Indirect phonon-assisted Auger recombination mechanisms in bulk InGaN are investigated
in the framework of perturbation theory, using first-principles phonon spectral density …