III-nitride nanostructures have recently emerged as promising materials for new
intersubband (ISB) devices in a wide variety of applications. These ISB technologies rely on …

Resonant tunneling diodes (RTDs) are candidates for high power terahertz oscillators, and
form the basis for understanding the quantum confinement and vertical transport in quantum …

AlGaN/GaN resonant tunneling diodes (RTDs), consisting of 20%(10%) aluminum-content in
double-barrier (DB) active layer, were grown by metal-organic chemical vapor deposition on …

Resonant tunneling diodes are nano-devices which have characteristics of negative
differential resistance. They are widely used in digital and analog circuits to reduce …

For the past two decades, repeatable resonant tunneling transport of electrons in III-nitride
double barrier heterostructures has remained elusive at room temperature. In this work we …

We report high quality, low dark current, deep Ultraviolet AlGaN/AlN Photodetectors on AlN
substrate. AlGaN based Photodetectors are grown and fabricated both on AlN and Sapphire …

Low-aluminum composition AlGaN/GaN double-barrier resonant tunneling structures were
grown by plasma-assisted molecular-beam-epitaxy on free-standing c-plane GaN substrates …

The current-voltage characteristics and metastability in GaN p++/n++ homojunction tunnel
diodes and n++/p++/i/n tunnel-contacted diodes grown via metal modulated epitaxy have …

Light-emitting diode (LED)-based lighting is the most dominant lighting solution in the
current era since it is energy-efficient and long-lasting. Hence, performance analysis of the …

We investigate the possibility of achieving valley filtering and enhanced negative differential
resistance (NDR) in transition metal dichalcogenide (TMD)-based optoelectronic …