Group-III-nitride semiconductors, including AlN, GaN, InN and their ternary, quaternary
compounds, are promising electronic and optoelectronic materials for the applications in …

In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …

Significant efforts are being put into the development of efficient micrometer-scale light
emitting diodes (LEDs) for future display technologies due to their marked benefits over …

High efficiency micro-LEDs, with lateral dimensions as small as one micrometer, are desired
for next-generation displays, virtual/augmented reality, and ultrahigh-speed optical …

GaN-based light-emitting devices have the potential to realize all visible emissions with the
same material system. These emitters are expected to be next-generation red, green, and …

Group-III nitrides and their alloys feature direct bandgaps covering a broad range of the
electromagnetic spectrum, making them a promising material system for various …

A droop-free nitride light-emitting diode (LED) with the capacity to operate beyond the
“green gap” has been a subject of intense scientific and engineering interest. While several …

With the advent of technologies such as augmented/virtual reality (AR/VR) that are moving
towards displays with high efficiency, small size, and ultrahigh resolution, the development …

Using molecular beam epitaxy, self-assembled AlGaN nanowires are grown directly on Ta
and Ti foils. Scanning electron microscopy shows that the nanowires are locally textured …

We report the band alignment parameters of the GaN/single-layer (SL) MoS 2
heterostructure where the GaN thin layer is grown by molecular beam epitaxy on CVD …