We introduce a method for calculating the probability with which a low-energy electron
hitting the wall of a bounded plasma gets stuck in it and apply the method to a dielectric wall …

Plasma processing is extensively utilized in enormous industries products like
semiconductor devices, textile fabrics, modifying polymers, and seed treatments. One of the …

The ion flux‐energy distribution function (IFEDF) is of crucial importance for surface
processing applications of capacitively coupled radio‐frequency (CCRF) plasmas. Here, we …

We describe a method for calculating the probability with which the wall of a plasma absorbs
an electron at low energy. The method, based on an invariant embedding principle …

Capacitively coupled plasma is investigated kinetically utilizing the particle-in-cell technique.
The argon (Ar) plasma is generated via two radio frequencies. The plasma bulk density …

The most fundamental response of an ionized gas to a macroscopic object is the formation
of the plasma sheath. It is an electron depleted space charge region, adjacent to the object …

In order to investigate collisionless radiofrequency plasma sheaths containing dust particles,
three models are utilized: the novel kinetic scheme Ensemble-in-Spacetime (EST) model for …

The discharge dynamics in geometrically asymmetric capacitively coupled plasmas are
investigated via a lumped model circuit. A realistic reactor configuration is assumed. A single …

One of the key parameters in the context of plasma assisted processing in semiconductor
fabrication using capacitive radio-frequency plasmas is the ion flux distribution at the …

The stationary unipolar ion sheath is investigated in the regime of intermediate gas
pressure. A mathematical model is consulted which describes the motion of a single species …