(57) ABSTRACT A resistance-variable memory device includes memory cells, a high
Voltage circuit, a precharging circuit, a bias circuit, and a sense amplifier. Each memory cell …

(57) ABSTRACT A semiconductor memory device comprises a plurality of first row lines
arranged in parallel; a plurality of column lines intersecting the first row lines; a plurality of …

A method of programming a nonvolatile memory cell. The nonvolatile memory cell includes
a diode steering element in series with a carbon storage element The method includes …

A nonvolatile semiconductor memory device comprises a memory cell including a variable
resistance element changing its electric resistance by voltage application and having current …

Nonvolatile memory devices include an array of variable-resistance memory cells and a
write driver electrically coupled to the array. The write driver is configured to drive a bit line in …

A memory includes a phase change element having a first side and a second side and a first
line coupled to the first side of the element. The memory includes an access device coupled …

It is a feature of exemplary embodiments to provide a phase-change random access
memory (PRAM) device that discharges bit lines before a write operation and a read opera …

In a particular embodiment, a method includes modifying an output impedance associated
with the input receiver. In response to modifying the output impedance, the method restricts …

BACKGROUND Recently, as electronic devices or appliances trend toward miniaturization,
low power consumption, high performance, multi-functionality, and so on, there is a demand …