[HTML][HTML] Atomic-scale investigation of γ-Ga2O3 deposited on MgAl2O4 and its relationship with β-Ga2O3
Nominally phase-pure γ-Ga 2 O 3 was deposited on (100) MgAl 2 O 4 within a narrow
temperature window centered at∼ 470 C using metal-organic chemical vapor deposition …
temperature window centered at∼ 470 C using metal-organic chemical vapor deposition …
Unveiling interface engineering dynamics between Ti and Ga2O3 nanowire
In this study, we investigate the interfacial reactions between Ga 2 O 3 nanowires (NWs) and
Ti contacts during annealing processes through in-situ transmission electron microscopy …
Ti contacts during annealing processes through in-situ transmission electron microscopy …
Origin of near-failure in Au contacts to polycrystalline β-Ga2O3 at high temperatures using interfacial studies
Suitable contacts to gallium oxide are a controversial topic with contact behavior depending
heavily on the pre-and post-processing conditions. Especially for the extreme environment …
heavily on the pre-and post-processing conditions. Especially for the extreme environment …
Structural and Chemical Inhomogeneity of Interface Underlying Nonideal Electrical Behavior in Au/β-Ga2O3 Contacts
The ultrawide bandgap (4.7-4.9 eV) of β-Ga2O3, in addition to its range of shallow n-type
dopants (Si, Sn, Ge) and commercially-available melt-grown substrates, have garnered …
dopants (Si, Sn, Ge) and commercially-available melt-grown substrates, have garnered …
Understanding Phase Stabilization and Transformations in Ga2O3 Wide-Bandgap Semiconductors Through In Situ Transmission Electron Microscopy
The wide bandgap (∼ 4.8 eV) semiconductor gallium oxide (Ga2O3) is of significant interest
for applications in high-power electronics and UV photodetection. Of its four commonly …
for applications in high-power electronics and UV photodetection. Of its four commonly …
Investigation of Processing and Annealing Conditions of Ohmic and Schottky Contacts on β-Ga2O3 with Enhanced Electrical Characteristics
EV Favela - 2023 - search.proquest.com
The prospects for growth of gallium oxide make it a promising wide band gap
semiconductor. During the last 10 years, β-Ga 2 O 3 has developed at a rapid rate, and a …
semiconductor. During the last 10 years, β-Ga 2 O 3 has developed at a rapid rate, and a …