Single step ohmic contact for heavily doped n-type silicon

F Paul, KN Manjunatha, S Govindarajan, S Paul - Applied Surface Science, 2020 - Elsevier
This work focusses on the metal-semiconductor contact on n-type c-Si wafers and explore
the possibility of using magnesium (Mg) to form electron–selective contacts instead of using …

Introduction to focused ion beams, ion sources, and the nano-aperture ion source

L van Kouwen - Advances in Imaging and Electron Physics, 2019 - Elsevier
In this chapter the basics of focused ion beam (FIB) systems are summarized and the nano-
aperture ion source (NAIS) is introduced. First a brief overview of ion-surface interactions …

Decrease of contact resistance at the interface of carbon nanotube/electrode by nanowelding

B Zhao, Y Wang, Y Zhang - Electronic Materials Letters, 2017 - Springer
Reliable interconnection between carbon nanotubes (CNTs) and external circuit is one of
the prerequisite in CNT electronics. In this work, ultrasonic nanowelding was used to bond …

Impact of buried oxide thickness in substrate-gate integrated silicon nanowire field-effect transistor biosensor performance for charge sensing

YM Tan, MFM Fathil, MNM Nuzaihan… - AIP Conference …, 2021 - pubs.aip.org
The paper investigated on performance in charge sensing for substrate-gate integrated
silicon nanowire fieldeffect transistor biosensor at different thickness of the buried oxide …

[PDF][PDF] Electrical Simulation on Silicon Nanowire Field-effect Transistor Biosensor at Different Substrate-gate Voltage Bias Conditions for Charge Detection.

XY Teoh, MFM Fathil, YM Tan… - International …, 2022 - ijneam.unimap.edu.my
In this work, the impact of different substrate-gate voltage bias conditions (below and above
the device threshold voltage) on current-voltage characteristics and sensitivity of a silicon …

Investigation of the Growth Mechanics of Laser Assisted Copper Deposition for Circuit Edit Applications

M DiBattista, J Furlong, M Levesque… - … for Testing and …, 2022 - dl.asminternational.org
Reproducible laser-assisted metal deposition with copper hexafluoroacetylacetonate
trimethylvinylsilane Cu (hfac)(TMVS) has been demonstrated on a range of relevant …

Single bismuth atom transistor for solid state atomic clock applications

L Fagiani - 2018 - politesi.polimi.it
The purpose of this master thesis is the realization of a multigate transistor with a nanometric
inner channel, used for atomic clock applications due to the single bismuth donor atoms …

Fabrication and characterization of engineered dewetted Si-based transistors

C Barri - 2018 - politesi.polimi.it
Abstract Large-scale, defect-free, micro-and nano semiconductor circuits represent the
nexus between electronic and photonic components. Semiconductors nanowires exhibit …