Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

This article provides a review of current development and challenges in brain-inspired
computing with memristors. We review the mechanisms of various memristive devices that …

Emerging nonvolatile memory (eNVM) devices are pushing the limits of emerging
applications beyond the scope of silicon-based complementary metal oxide semiconductors …

Hardware artificial neural network (ANN) systems with high density synapse array devices
can perform massive parallel computing for pattern recognition with low power consumption …

The information technologies have been increasing exponentially following Moore's law
over the past decades. This has fundamentally changed the ways of work and life. However …

Defects are essential to switch the resistance states in resistive random-access memory
(RRAM) devices. Controlled defects in such devices can lead to the stabilization of the …

To inaugurate energy-efficient hardware as a solution to complex tasks, information
processing paradigms shift from von Neumann to non-von Neumann computing …

Abstract Two‐dimensional (2D) transition metal dichalcogenide has attracted significant
attention recently due to its unique electrical and optical properties. However, MoS2 …

Although the structure and function of the human brain are still far from being fully
understood, brain‐inspired computing architectures mainly consisting of artificial neurons …