This paper reviews the recent historical trends of the NAND Flash technology, highlighting
the evolution of its main parameters and explaining what allowed it to become not only the …

A paradigm for MOSFET instabilities is outlined based on gate oxide traps and the detailed
understanding of their properties. A model with trap energy levels in the gate dielectric and …

It has recently been suggested that random telegraph noise (RTN) and the bias temperature
instability (BTI) are due to similar defects. Here we thoroughly analyze this hypothesis using …

Forthcoming technology nodes are posing major challenges on the manufacturing of
reliable (real-time) systems: process variations, accelerated degradation aging, as well as …

Charge capture and emission by point defects in gate oxides of metal–oxide–semiconductor
field-effect transistors (MOSFETs) strongly affect reliability and performance of electronic …

Random telegraph noise (RTN) is one of the important dynamic variation sources in
ultrascaled MOSFETs. In this paper, the recently focused ac trap effects of RTN in digital …

This paper presents understandings on BTI variability based upon an extensive dataset.
This enables to select between various theoretical statistical models and to propose a novel …

Gate-all-around (GAA) silicon nanowire (NW) CMOS transistors demonstrate outstanding
total-ionizing-dose (TID) tolerance due to the ultrascaled gate dielectric thickness, enhanced …

After nearly half a century of research into the bias temperature instability, two classes of
models have emerged as the strongest contenders. One class of models, the reaction …

Despite a number of recent advances made in understanding bias temperature instability
(BTI), there is still no simple simulation methodology available which can capture the impact …