This paper presents an inventive and extremely dependable radiation-hardened by-design
(RHBD) 12T SRAM Cell with enhanced writing capability (RHWC-12T) for a space radiation …

SRAM cells are widely used to design memory blocks of, eg, caches, register files, and
translation lookaside buffers. Depending on the SRAM application, the design requirements …

SRAM cells in spacecraft or space stations are susceptible to single event upset (SEU)
caused by high-energy particle impacts. Conventional 6 T SRAM cells are more prone to soft …

The static random-access memory (SRAM) cells used in the high radiation environment of
aerospace have become highly vulnerable to single-event effects (SEE). Therefore, a 12T …

Static random access memory (SRAM) is a critical cell of VLSI, which is sensitive to the
charge generated by high-energy particles and susceptible to logical errors. In this paper …

The aerospace environment contains extremely energetic particles that trigger single-event
transients (SET), leading to single-event upsets (SEU) in the memory cell. An efficient SRAM …

With growing interest in near-threshold voltage regime (NTV) to make energy-efficient
circuits, their operation has become less reliable and prone to errors. A soft error is one of …

As technology scales down, the critical charge (QC) of vulnerable nodes decreases, making
SRAM cells more susceptible to soft errors in the aerospace industry. This article proposes a …

Abstract Single Event Transients (SET) pose a growing challenge to reliability of memory
circuits as the device dimensions continue to shrink. It is essential to assess the effect of …

This paper proposes a novel design of ultra-low power radiation-hardened single-ended
SRAM bit-cell using the gate-all-around CNT-MOSFET based-gate diffusion input method …