Hardware realization of artificial intelligence (AI) requires new design styles and even
underlying technologies than those used in traditional digital processors or logic circuits …

High-quality random numbers are very critical to many fields such as cryptography, finance,
and scientific simulation, which calls for the design of reliable true random number …

In this paper, we propose an energy-efficient, reliable, hybrid, 10-transistor/2-Double-Barrier-
Magnetic-Tunnel-Junction (10T2DMTJ) non-volatile (NV) ternary content-addressable …

As we move toward the commercialization of Spin-Transfer Torque Magnetic Random
Access Memories (STT-MRAM), cost-effective testing and in-field reliability have become …

Today's von Neumann computing systems are facing major challenges making them not
suitable for evolving ultralow power (eg, edge computing) applications. Therefore …

As one of the most promising emerging non-volatile memory (NVM) technologies, spin-
transfer torque magnetic random access memory (STT-MRAM) has attracted significant …

As a unique mechanism for MRAMs, magnetic coupling needs to be accounted for when
designing memory arrays. This paper models both intra-and inter-cell magnetic coupling …

Understanding the manufacturing defects in magnetic tunnel junctions (MTJs), which are the
data-storing elements in STT-MRAMs, and their resultant faulty behaviors are crucial for …

Computation-in-memory (CIM) is a promising solution to tackle the memory wall problem in
big data and artificial intelligence applications. One possible approach to implement such a …

STT-MRAM has long been a promising non-volatile memory solution for the embedded
application space owing to its attractive characteristics such as non-volatility, low leakage …